Updated on 2024/05/29

写真a

 
ban takahiko
 
Organization
Faculty of Advanced Engineering
Department
School of Engineering Department of Electronic Systems Engineering
Title
Lecturer

Degree

  • 博士（工学） ( 2016.3   奈良先端科学技術大学院大学 )

Research Experience

  • The University of Shiga Prefecture   School of Engineering Department of Electronic Systems Engineering   Lecturer

    2021.4

Available Technology

  • 脳機能模倣素子など次世代微細素子の開発

Papers

  • Analysis of the Diffraction Pattern Generated by the Wings of Graphium sarpedon

    Nonaka T., Amano S., Shinohara K., Kitawaki T., Ban T., Yamamoto S.I.

    Brazilian Journal of Physics   52 ( 2 )   2022.4

    　More details

    Publisher：Brazilian Journal of Physics  

    There are blue/green patches on the wings of the Graphium sarpedon. In this work, we studied the wings of the Graphium sarpedon as a diffraction grating by analyzing the diffraction pattern using laser irradiation. Our experimental results demonstrate diffraction in the wings of the Graphium sarpedon for the first time in the world. The diffraction was caused by the sockets on the wing membrane.

    DOI： 10.1007/s13538-021-01048-6

    Scopus

  • Optical properties of inorganic powder EL device with a multifunctional dielectric layer

    Nonaka T., Ban T., Yamamoto S.I.

    Japanese Journal of Applied Physics   61 ( 4 )   2022.4

    　More details

    Publisher：Japanese Journal of Applied Physics  

    In this paper, we report the optical properties of an inorganic powder electroluminescence (EL) device with a multifunctional dielectric layer. BaTiO3 doped with Yb3+ and Er3+ was used as a dielectric layer of an inorganic powder EL device. Also, BaTiO3 doped with Yb3+ and Er3+ can function as an upconversion phosphor. According to the luminance measurement, when near infrared (NIR) irradiation with 980 nm wavelengths was applied, the luminance was increased by only about 90 cd m-2. However, when both NIR irradiation and 150 root mean square voltages were applied, the luminance increased by about 400 cd m-2. Additionally, the emission spectrum and the chromaticity were changed. Therefore, BaTiO3: Yb3+, Er3+ plays two roles as a dielectric and phosphor simultaneously. The optical properties can also be manipulated by using BaTiO3: Yb3+, Er3+ as a dielectric layer of an inorganic powder EL device.

    DOI： 10.35848/1347-4065/ac4f0b

    Scopus

  • Annealing temperature dependence of upconversion phosphor of TiO<inf>2</inf>-ZnO doped with Yb<sup>3+</sup> and Tm<sup>3+</sup>

    Nonaka T., Ban T., Yamamoto S.I.

    Sensors and Materials   33 ( 5 )   1739 - 1747   2021.1

    　More details

    Publisher：Sensors and Materials  

    In this paper, we report on the annealing temperature dependence of the upconversion (UC) phosphor of TiO2-ZnO doped with Yb3+ and Tm3+. We prepared samples using metal-organic decomposition (MOD) solutions and Tm2O3 powder, which were analyzed in terms of their photoluminescence (PL) spectra and crystal structures. The PL spectra showed a blue UC phosphor band at a wavelength of 476 nm. The emission intensity was greatest after annealing at 850 °C. By analyzing the crystal structures using an X-ray diffractometer (XRD), it was found that there was a large amount of RE2Ti2O7 in the samples annealed at 900 ℃ and above.

    DOI： 10.18494/SAM.2021.3364

    Scopus

  • MoS<inf>2</inf>FET fabrication using adhesion lithography and their application to chemical sensors

    Ban T., Ogura M., Yamamoto S.I.

    Japanese Journal of Applied Physics   60 ( 1 )   2021.1

    　More details

    Publisher：Japanese Journal of Applied Physics  

    Molybdenum disulfide (MoS2) field effect transistors (FETs) are investigated for chemical sensor applications. However, the formation of electrodes after a MoS2 transistor is transferred to the substrate results in process damage. In this work, MoS2 FETs are fabricated by implementing a gate, source, and drain pre-formation, and then by transferring MoS2 using polydimethylsiloxane. The fabricated FETs are characterized after their exposure to ethanol vapor as a case study for chemical sensor applications. A sub-threshold swing of 72 mV/dec can be observed for a fabricated FET with a field effect mobility of 5.05 cm2 V-1 s-1. The ON/OFF ratio is approximately 104. No significant change in the FET's properties due to contact resistance is observed. Next, V th is shifted to a 1.7 V-positive value upon ethanol vapor exposure. By removing the ethanol vapor, a 1.4 V-negative shift in the threshold voltage value is observed compared with that before the ethanol vapor removal.

    DOI： 10.35848/1347-4065/abcf5a

    Scopus

  • HfO<inf>2</inf> thin film formed by solution-coating method and application to resistive switching device

    Ban T., Matsumura R., Yamamoto S.I.

    Japanese Journal of Applied Physics   60 ( 1 )   2021.1

    　More details

    Publisher：Japanese Journal of Applied Physics  

    The characteristics of a resistive-switching RAM (ReRAM) device are investigated using a HfO2 thin film. HfO2 is prepared using the solution-coating method. In the HfO2-precursor solution, hafnium isopropoxide is used as a solute and ethylene glycol monomethyl ether as a solvent. Additionally, diethanolamine (DEA) is used as a chemical modifier. The solution is prepared by adjusting the solvent to achieve concentrations of 0.1 mol l−1, 0.5 mol l−1, and 0.5 mol l−1 + DEA (4 eq). After applying the solution on Pt, the films are obtained by spin coating and sintering. The HfO2-ReRAM is fabricated using Al as the top electrode, and bipolar properties are obtained for all three concentrations. A fabricated HfO2-ReRAM device with an average thickness of approximately 28 nm exhibits a ON/OFF current ratio of 104. In the high-resistance state, conduction is mainly due to the Pool-Frenkel conduction and Schottky emission, whereas in the low-resistance state, conduction is mainly ohmic.

    DOI： 10.35848/1347-4065/abd368

    Scopus

  • Nanoscale mapping of ZnO-TiO<inf>2</inf>up-conversion phosphor containing Yb<sup>3+</sup>and Er<sup>3+</sup>

    Nonaka T., Imai T., Ban T., Yamamoto S.I.

    Materials Research Express   7 ( 5 )   2020.5

    　More details

    Publisher：Materials Research Express  

    Up-conversion phosphors have attracted considerable attention for their visible-light emission. In this study, a ZnO-TiO2 up-conversion phosphor containing Yb3+ and Er3+ ions was prepared; its emission characteristics and crystal structure were analyzed, and its nanoscale elemental mapping was examined. The metal organic decomposition (MOD) method was used to fabricate the samples. After firing the sample at 1000 °C, the emission intensity showed a maximum when the molar ratio was Ti/Zn/Yb/Er = 1/1/0.06/0.02. Finally, the function of each element was considered from the viewpoint of the crystal structure and nanoscale mapping.

    DOI： 10.1088/2053-1591/ab89db

    Scopus

  • Crystal structure dependence of red to green light emission by LaOF : Yb<sup>3+</sup>/Er<sup>3+</sup> up-conversion phosphor

    Yamamoto S., Ohyama K., Ban T., Nonaka T.

    Materials Research Express   6 ( 3 )   2019.3

    　More details

    Publisher：Materials Research Express  

    Up-conversion (UC) is the conversion of electromagnetic waves from long to short wavelengths. In this study, near-infrared rays (with wavelengths of 980 nm) were upconverted to visible light rays (with wavelengths of 400-750 nm), and the UC luminescence characteristics of lanthanide-doped materials were measured and analyzed. LaOF : Yb3+/Er3+ UC phosphor samples were fabricated by using LaF3 (hexagonal), Yb2O3 (cubic), and Er2O3 (cubic) powders. The mole ratio of La : Yb : Er was 1 : 0.01 : 0.01, and LaOF : Yb3+/Er3+ was obtained by baking these materials. The UC emission of yellow to green light was confirmed by the overlapping of green and red light. The emitted light intensity was the highest for the sample baked at 1100 °C for 2 h. Furthermore, x-ray diffraction (XRD) results revealed that the photoluminescence emission intensity increased with increasing integrated intensity of the tetragonal LaOF crystal system.

    DOI： 10.1088/2053-1591/aaf35a

    Scopus

  • Fabrication and evaluation of repairable resistive switching memory for a synaptic device

    Ban T., Uraoka Y., Yamamoto S.I.

    Japanese Journal of Applied Physics   58 ( 8 )   2019.1

    　More details

    Publisher：Japanese Journal of Applied Physics  

    This study aimed to fabricate a synapse-mimicking device as resistive memory with a repair function. We fabricated a structure in which Ta2O5 and MnO2 were sandwiched as resistive layers between electrodes. When a pulse voltage was applied to this device, its resistance was lowered. When the lower voltage was continuously applied, the resistance value was restored. This device mimics the short-term plasticity of synapses. In addition, the tantalum oxide layer was found to exist in the suboxide state in the measured device by STEM and XPS; hence, a resistance change was considered to occur at the interface between MnO2 and Ta2O5

    DOI： 10.7567/1347-4065/ab2c1b

    Scopus

  • Ultrashort intrinsic-like channel FETs with nanodot-type floating gate utilizing biomaterial

    Ban T., Migita S., Uenuma M., Okamoto N., Ishikawa Y., Uraoka Y., Yamashita I., Yamamoto S.I.

    Japanese Journal of Applied Physics   57 ( 12 )   2018.12

    　More details

    Publisher：Japanese Journal of Applied Physics  

    We investigated the electrical characteristics of an n-i-n-type FET of a sub-10 nm channel with nanoparticles (NPs). To fabricate the FET, a V-groove was formed in a silicon-on-insulator substrate by anisotropic wet etching. Cage-shaped proteins (ferritin) was used for the formation and placement of NPs. A solution of ferritin containing a metal oxide core was dropped onto the substrate, and spin drying was performed to arrange the NPs at the bottom of the V-groove. NPs served as a floating gate for this device. Threshold voltage (V th) shift was confirmed as a memory operation in devices with NPs. The V th shift was clearly observed in different types of NPs. The V th shift was controlled along the channel length direction by a single nanodot floating gate.

    DOI： 10.7567/JJAP.57.125003

    Scopus

  • One-dimensional array of gold nanoparticles fabricated using biotemplate and its application to fine FET

    Ban T., Uenuma M., Migita S., Okamoto N., Ishikawa Y., Uraoka Y., Yamashita I., Yamamoto S.I.

    Japanese Journal of Applied Physics   57 ( 6 )   2018.6

    　More details

    Publisher：Japanese Journal of Applied Physics  

    By synthesizing AuS nanoparticles (NPs) with spherical shell protein (ferritin) and using a V-groove, a one-dimensional array of NPs was formed at the bottom of the V-groove. It has been reported that AuS NPs are converted to Au NPs by UV/ozone treatment. Floating gate memory (FGM) was fabricated by applying this one-dimensional array to V-grooved junctionless (JL) FETs, V-grooved nin-like-type FETs, and pip-like-type FETs, which are fine FETs. In JL-FETs, it is considered that conversion occurred because of good charge storage efficiency, and operation in the opposite direction to normal FGM operation was seen. In the nin-like and pip-like types devices, the same operation as in conventional FGM was shown, and the width of the memory window was about the same size as when one electron entered one NP. The one-dimensional arrangement of the metal NPs used in this study is considered to be applicable to various fields of nanotechnology.

    DOI： 10.7567/JJAP.57.06HC05

    Scopus

  • Ultrafine intrinsic FET with nanodot type floating gate

    Ban T., Migita S., Olamoto N., Uenuma M., Uraoka Y., Yamamoto S.

    AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings   268 - 269   2017.8

    　More details

    Publisher：AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings  

    The channel length of the next generation semiconductor device is 10 nm or less. In general, a pn junction is necessary for FETs, but it is difficult to make the p-n junction to 10 nm or less depending on the concentration gradient relationship. Further, variations in the impurity concentration between the devices cause a problem. For this reason, FETs using intrinsic semiconductors for the channel have been studied. In this study, we investigated the electrical characteristics of n-i-n, p-i-p type FET with channel less than 10 nm by accumulating electric charge in nanoparticles (NP). For a transistor with a channel length of 10 nm or less, a V-groove type FET was used. In addition, NPs were placed at the bottom of the V-groove using a Bio Nano Process (BNP). The protein used is a cage shaped protein called ferritin, which can convert various inorganic materials into nanoparticles. NPs act as a floating gate for this device. Memory operation was confirmed with devices with NPs. We observed that the threshold voltage of the device varied due to the work function of the nanoparticles. This device with well controlled nanostructures is believed to reveal further electronic properties in the region below 10 nm.

    Scopus

  • One-dimensional arrangement of nanoparticles utilizing the V-groove and cage shaped proteins

    Ban T., Uenuma M., Migita S., Okamoto N., Ishikawa Y., Uraoka Y., Yamashita I., Yamamoto S.I.

    Japanese Journal of Applied Physics   56 ( 6 )   2017.6

    　More details

    Publisher：Japanese Journal of Applied Physics  

    The one-dimensional arrangement of nanoparticles (NPs) was performed using a V-groove and ferritins as spherical shell proteins. The V-groove was synthesized by lithography and anisotropic etching of a Si substrate. Ferritin has an outer diameter of 12nm and an inner diameter of 6 nm, and various inorganic substances can be formed into the cavity. In this study, iron oxide, cobalt oxide, and indium oxide cores were used. The surface potential of ferritin can be changed by genetic modification. Particularly, by using Fer8-K98E, NPs could be arranged one-dimensionally onto the bottom of the V-groove. In addition, we succeeded in selectively forming a one-dimensional array of one layer, two layers, and three layers by changing the protein concentration. This experiment is expected to be applicable to various one-dimensional devices.

    DOI： 10.7567/JJAP.56.06GG11

    Scopus

  • Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate

    Ban T., Migita S., Uenuma M., Okamoto N., Ishikawa Y., Uraoka Y., Yamashita I., Yamamoto S.I.

    Japanese Journal of Applied Physics   56 ( 3 )   2017.3

    　More details

    Publisher：Japanese Journal of Applied Physics  

    Metal nanoparticles (NPs) embedded in junctionless field-effect transistors (JL-FETs) with a channel length of about sub-10-nm are fabricated and demonstrated. The anisotropic wet etching of a silicon-on-insulator (SOI) substrate was utilized to form V-grooves and define a nanometer-scale channel. Metal NPs are selectively placed onto the bottom of a V-groove using a bio nano process (BNP). A JL-FET is applied to a floating gate memory and used to study the impacts of charges close to the short channel. Low-voltage operation and memory behavior of broad threshold voltage appear. It is estimated by simulation that positive and negative charges equivalent to approximately 10 electrons are accumulated in one NP. It is expected that the JL-FETs can overcome the scaling limitations of floating gate memories.

    DOI： 10.7567/JJAP.56.03BB05

    Scopus

  • Charge effects of ultrafine FET with nanodot type floating gate

    Ban T., Migita S., Uraoka Y., Yamamoto S.

    Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials   29 - 30   2016.8

    　More details

    Publisher：Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials  

    Metal nanoparticles (NPs) embedded in junctionless field-effect transistors (JL-FETs) with a length of 3.6 nm are fabricated and demonstrated. The anisotropic wet etching of a silicon-on-insulator (SOI) substrate was utilized to form V-grooves and to define nanometer-scale channel. Metal NPs are selectively placed onto bottom of V-groove using the Bio nano process (BNP). The JL-FET is applied to floating gate memory and used to investigate an impact on the short channel by charge trap of NPs. Low-voltage operation and broad threshold voltage shift as memory behavior are appeared in 3.6 nm channel length. It is expected that the JL-FETs can overcome the scaling limitations in floating gate memory, while the charge trap cause major problems in the sub 10 nm region.

    DOI： 10.1109/AM-FPD.2016.7543607

    Scopus

  • Ultra-short channel junctionless transistor with a one-dimensional nanodot array floating gate

    Ban T., Uenuma M., Migita S., Okamoto N., Ishikawa Y., Yamashita I., Uraoka Y.

    Applied Physics Letters   106 ( 25 )   2015.6

    　More details

    Publisher：Applied Physics Letters  

    The electrical properties of a junctionless field-effect transistor with a sub-10-nm scale channel and FeOx nanoparticles (NPs) were studied. The anisotropic wet etching of a silicon-on-insulator substrate was used to form V-grooves and define the nanometer-scale channel. The NPs were selectively placed on the bottom of the V-groove using the bio-nano process. Low-voltage operation and a wide threshold voltage (Vth) shift as memory behavior were confirmed in a device with a 3.6-nm channel length. These results indicate that the Vth is controlled by the single-nanodot floating gate along the channel length direction.

    DOI： 10.1063/1.4922945

    Scopus

  • Evaluation of TaOx nanoparitcles for resistive random access memory

    Kado K., Ban T., Uenuma M., Ishikawa Y., Yamashita I., Uraoka Y.

    IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai   130 - 131   2013.10

    　More details

    Publisher：IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai  

    We demonstrated a resistive memory using TaOx nanoparticles (NPs) utilizing Bio Nano Process (BNP). TaOx NPs were produced by ferritin proteins. The ReRAM with TaOx NPs exhibits resistive switching behavior evaluated by conductive atomic force microscopy. This result indicates that TaOx nano-ReRAM utilizing BNP can be a high-density non-volatile memory. © 2013 IEEE.

    DOI： 10.1109/IMFEDK.2013.6602273

    Scopus

  • Memristive nanoparticles formed using a biotemplate

    Uenuma M., Ban T., Okamoto N., Zheng B., Kakihara Y., Horita M., Ishikawa Y., Yamashita I., Uraoka Y.

    RSC Advances   3 ( 39 )   18044 - 18048   2013.10

    　More details

    Publisher：RSC Advances  

    We demonstrated a novel biological process based on the use of a supramolecular protein as a reaction cage, in which a memristive element is formed. We showed that ferritin can be used to generate memristive nanoparticles by biomineralization. Magnetite (Fe<inf>3</inf>O<inf>4</inf>) nanoparticles with a size of 6 nm were prepared using a biotemplate. After a fine monolayer of NPs was formed on the electrode, the protein shells were removed in order to improve the electrical contact between NP and electrode. The synthesized nanoparticles exhibit clear bipolar resistive switching behaviors in metal/oxide/metal structure. From c-AFM measurements, even a single NP exhibits the memory behavior, leading to their promising potential application in nanoscale resistive memory. © The Royal Society of Chemistry.

    DOI： 10.1039/c3ra42392a

    Scopus

  • Fabrication and Evaluation of Resistive Switching Devices Utilizing Selective Surface Oxide Films of Liquid Metal Alloys Reviewed

    Yuto Katsuma, Takahiko Ban, Masayoshi Ichimiya, Junichi Yanagisawa, Shin-Ichi Yamamoto

    2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)   2023.12

    　More details

    Authorship：Corresponding author   Language：English   Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1109/IMFEDK60983.2023.10366344

  • Heat Treatment Dependence and Electrical Characterization of Resistive Switching Devices Using Liquid Metal Reviewed

    Yuusuke Hirano, Takahiko Ban, Masayoshi Ichimiya, Junichi Yanagisawa, Shin-Ichi Yamamoto

    2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)   2023.12

    　More details

    Authorship：Last author   Language：English  

    DOI： 10.1109/IMFEDK60983.2023.10366329

  • Optical properties of inorganic powder EL device with a multifunctional dielectric layer Reviewed International journal

    Nonaka, T. and Ban, T. and Yamamoto, S.-I.

    Japanese Journal of Applied Physics   61 ( 4 )   044003   2022

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The vice charge)  

    DOI： 10.35848/1347-4065/ac4f0b

    Scopus

  • Analysis of the Diffraction Pattern Generated by the Wings of Graphium sarpedon Reviewed International journal

    Nonaka, T. and Amano, S. and Shinohara, K. and Kitawaki, T. and Ban, T. and Yamamoto, S.-I.

    Brazilian Journal of Physics   52 ( 2 )   30   2022

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The vice charge)  

    DOI： 10.1007/s13538-021-01048-6

    Scopus

  • Annealing temperature dependence of upconversion phosphor of TiO2-ZnO doped with Yb3+ and Tm3+ Reviewed International journal

    Nonaka, T. and Ban, T. and Yamamoto, S.-I.

    Sensors and Materials   33 ( 5 )   1739 - 1747   2021

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The vice charge)  

    DOI： 10.18494/SAM.2021.3364

    Scopus

  • HfO2 thin film formed by solution-coating method and application to resistive switching device Reviewed International journal

    Ban, T. and Matsumura, R. and Yamamoto, S.-I.

    Japanese Journal of Applied Physics   60 ( 1 )   014002   2021

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The main charge)  

    DOI： 10.35848/1347-4065/abd368

    Scopus

  • MoS2FET fabrication using adhesion lithography and their application to chemical sensors Reviewed International journal

    Ban, T. and Ogura, M. and Yamamoto, S.-I.

    Japanese Journal of Applied Physics   60 ( 1 )   016504   2021

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The main charge)  

    DOI： 10.35848/1347-4065/abcf5a

    Scopus

  • Nanoscale mapping of ZnO-TiO2up-conversion phosphor containing Yb3+and Er3+ Reviewed International journal

    Nonaka, T. and Imai, T. and Ban, T. and Yamamoto, S.-I.

    Materials Research Express   7 ( 5 )   055021   2020

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The vice charge)  

    DOI： 10.1088/2053-1591/ab89db

    Scopus

  • Crystal structure dependence of red to green light emission by LaOF : Yb3+/Er3+ up-conversion phosphor International journal

    Yamamoto, S.-I. and Ohyama, K. and Ban, T. and Nonaka, T.

    Materials Research Express   6 ( 3 )   036202   2019

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The vice charge)  

    DOI： 10.1088/2053-1591/aaf35a

    Scopus

  • Fabrication and evaluation of repairable resistive switching memory for a synaptic device Reviewed International journal

    Ban, T. and Uraoka, Y. and Yamamoto, S.-I.

    Japanese Journal of Applied Physics   58 ( 8 )   086503   2019

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The main charge)  

    DOI： 10.7567/1347-4065/ab2c1b

    Scopus

  • Ultrashort intrinsic-like channel FETs with nanodot-type floating gate utilizing biomaterial Reviewed International journal

    Ban, T. and Migita, S. and Uenuma, M. and Okamoto, N. and Ishikawa, Y. and Uraoka, Y. and Yamashita, I. and Yamamoto, S.-I.

    Japanese Journal of Applied Physics   57 ( 12 )   125003   2018

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The main charge)  

    DOI： 10.7567/JJAP.57.125003

    Scopus

  • One-dimensional array of gold nanoparticles fabricated using biotemplate and its application to fine FET Reviewed International journal

    Ban, T. and Uenuma, M. and Migita, S. and Okamoto, N. and Ishikawa, Y. and Uraoka, Y. and Yamashita, I. and Yamamoto, S.-I.

    Japanese Journal of Applied Physics   57 ( 6 )   06HC05   2018

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The main charge)  

    DOI： 10.7567/JJAP.57.06HC05

    Scopus

  • Core-shell structure ratio of the quantum dots CuGaS<inf>2</inf>/ZnS and the light-emitting properties Reviewed

    Itoh R., Nagakubo J., Ban T., Yamamoto S.

    Proceedings of the International Display Workshops   2   1383 - 1386   2017.1

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Proceedings of the International Display Workshops  

    In this study, Cu-Ga-S2/ZnS quantum dots (QDs) with a core-shell structure using Ga instead of In were attempted. QDs were evaluated as a function of core-shell structure ratio photoluminescence. Also used to characterize the QDs was energy dispersive X-ray spectroscopy.

    Scopus

    Other Link： https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85056179915&origin=inward

  • Ultrafine intrinsic FET with nanodot type floating gate Reviewed International journal

    Ban, T. and Migita, S. and Olamoto, N. and Uenuma, M. and Uraoka, Y. and Yamamoto, S.-I.

    AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings   8006146   2017

    　More details

    Language：English   Publishing type：Research paper (international conference proceedings)   Participation form：Joint(The main charge)  

    Scopus

  • One-dimensional arrangement of nanoparticles utilizing the V-groove and cage shaped proteins Reviewed International journal

    Ban, T. and Uenuma, M. and Migita, S. and Okamoto, N. and Ishikawa, Y. and Uraoka, Y. and Yamashita, I. and Yamamoto, S.-I.

    Japanese Journal of Applied Physics   56 ( 6 )   06GG11   2017

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The main charge)  

    DOI： 10.7567/JJAP.56.06GG11

    Scopus

  • Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate Reviewed International journal

    Ban, T. and Migita, S. and Uenuma, M. and Okamoto, N. and Ishikawa, Y. and Uraoka, Y. and Yamashita, I. and Yamamoto, S.-I.

    Japanese Journal of Applied Physics   56 ( 3 )   03BB05   2017

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The main charge)  

    DOI： 10.7567/JJAP.56.03BB05

    Scopus

  • Core-shell structure ratio of the quantum dots CuGaS2/ZnS and the light-emitting properties Reviewed International journal

    Itoh, R. and Nagakubo, J. and Ban, T. and Yamamoto, S.-I.

    Proceedings of the International Display Workshops   2   1383 - 1386   2017

    　More details

    Language：English   Publishing type：Research paper (international conference proceedings)   Participation form：Joint(The vice charge)  

    Scopus

  • Charge effects of ultrafine FET with nanodot type floating gate Reviewed International journal

    Ban, T. and Migita, S. and Uraoka, Y. and Yamamoto, S.-I.

    Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials   7543607   2016

    　More details

    Language：English   Publishing type：Research paper (international conference proceedings)   Participation form：Joint(The main charge)  

    DOI： 10.1109/AM-FPD.2016.7543607

    Scopus

  • Ultra-short channel junctionless transistor with a one-dimensional nanodot array floating gate Reviewed International journal

    Ban, T. and Uenuma, M. and Migita, S. and Okamoto, N. and Ishikawa, Y. and Yamashita, I. and Uraoka, Y.

    Applied Physics Letters   106 ( 25 )   253104   2015

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The main charge)  

    DOI： 10.1063/1.4922945

    Scopus

  • Evaluation of TaOx nanoparitcles for resistive random access memory Reviewed

    Kado, K. and Ban, T. and Uenuma, M. and Ishikawa, Y. and Yamashita, I. and Uraoka, Y.

    IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai   6602273   2013

    　More details

    Language：English   Publishing type：Research paper (international conference proceedings)   Participation form：Joint(The vice charge)  

    DOI： 10.1109/IMFEDK.2013.6602273

    Scopus

  • Memristive nanoparticles formed using a biotemplate Reviewed International journal

    Uenuma, M. and Ban, T. and Okamoto, N. and Zheng, B. and Kakihara, Y. and Horita, M. and Ishikawa, Y. and Yamashita, I. and Uraoka, Y.

    RSC Advances   3 ( 39 )   18044 - 18048   2013

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Participation form：Joint(The vice charge)  

    DOI： 10.1039/c3ra42392a

    Scopus

▼display all