Organization
Faculty of Advanced Engineering
Department
School of Engineering Department of Electronic Systems Engineering
Title
Lecturer
ban takahiko
Degree
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博士（工学） ( 2016.3 奈良先端科学技術大学院大学 )
Research Experience
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The University of Shiga Prefecture School of Engineering Department of Electronic Systems Engineering Lecturer
2021.4
Available Technology
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脳機能模倣素子など次世代微細素子の開発
Papers
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Optical properties of inorganic powder EL device with a multifunctional dielectric layer Reviewed International journal
Nonaka, T. and Ban, T. and Yamamoto, S.-I.
Japanese Journal of Applied Physics 61 ( 4 ) 044003 2022
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Analysis of the Diffraction Pattern Generated by the Wings of Graphium sarpedon Reviewed International journal
Nonaka, T. and Amano, S. and Shinohara, K. and Kitawaki, T. and Ban, T. and Yamamoto, S.-I.
Brazilian Journal of Physics 52 ( 2 ) 30 2022
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Annealing temperature dependence of upconversion phosphor of TiO2-ZnO doped with Yb3+ and Tm3+ Reviewed International journal
Nonaka, T. and Ban, T. and Yamamoto, S.-I.
Sensors and Materials 33 ( 5 ) 1739 - 1747 2021
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HfO2 thin film formed by solution-coating method and application to resistive switching device Reviewed International journal
Ban, T. and Matsumura, R. and Yamamoto, S.-I.
Japanese Journal of Applied Physics 60 ( 1 ) 014002 2021
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MoS2FET fabrication using adhesion lithography and their application to chemical sensors Reviewed International journal
Ban, T. and Ogura, M. and Yamamoto, S.-I.
Japanese Journal of Applied Physics 60 ( 1 ) 016504 2021
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Nanoscale mapping of ZnO-TiO2up-conversion phosphor containing Yb3+and Er3+ Reviewed International journal
Nonaka, T. and Imai, T. and Ban, T. and Yamamoto, S.-I.
Materials Research Express 7 ( 5 ) 055021 2020
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Crystal structure dependence of red to green light emission by LaOF : Yb3+/Er3+ up-conversion phosphor International journal
Yamamoto, S.-I. and Ohyama, K. and Ban, T. and Nonaka, T.
Materials Research Express 6 ( 3 ) 036202 2019
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Fabrication and evaluation of repairable resistive switching memory for a synaptic device Reviewed International journal
Ban, T. and Uraoka, Y. and Yamamoto, S.-I.
Japanese Journal of Applied Physics 58 ( 8 ) 086503 2019
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Ultrashort intrinsic-like channel FETs with nanodot-type floating gate utilizing biomaterial Reviewed International journal
Ban, T. and Migita, S. and Uenuma, M. and Okamoto, N. and Ishikawa, Y. and Uraoka, Y. and Yamashita, I. and Yamamoto, S.-I.
Japanese Journal of Applied Physics 57 ( 12 ) 125003 2018
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One-dimensional array of gold nanoparticles fabricated using biotemplate and its application to fine FET Reviewed International journal
Ban, T. and Uenuma, M. and Migita, S. and Okamoto, N. and Ishikawa, Y. and Uraoka, Y. and Yamashita, I. and Yamamoto, S.-I.
Japanese Journal of Applied Physics 57 ( 6 ) 06HC05 2018
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Core-shell structure ratio of the quantum dots CuGaS<inf>2</inf>/ZnS and the light-emitting properties Reviewed
Itoh R., Nagakubo J., Ban T., Yamamoto S.
Proceedings of the International Display Workshops 2 1383 - 1386 2017.1
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Ultrafine intrinsic FET with nanodot type floating gate Reviewed International journal
Ban, T. and Migita, S. and Olamoto, N. and Uenuma, M. and Uraoka, Y. and Yamamoto, S.-I.
AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings 8006146 2017
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Core-shell structure ratio of the quantum dots CuGaS2/ZnS and the light-emitting properties Reviewed International journal
Itoh, R. and Nagakubo, J. and Ban, T. and Yamamoto, S.-I.
Proceedings of the International Display Workshops 2 1383 - 1386 2017
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One-dimensional arrangement of nanoparticles utilizing the V-groove and cage shaped proteins Reviewed International journal
Ban, T. and Uenuma, M. and Migita, S. and Okamoto, N. and Ishikawa, Y. and Uraoka, Y. and Yamashita, I. and Yamamoto, S.-I.
Japanese Journal of Applied Physics 56 ( 6 ) 06GG11 2017
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Estimation of charge effects of ultrafine channel utilizing junctionless transistor with nanodot-type floating gate Reviewed International journal
Ban, T. and Migita, S. and Uenuma, M. and Okamoto, N. and Ishikawa, Y. and Uraoka, Y. and Yamashita, I. and Yamamoto, S.-I.
Japanese Journal of Applied Physics 56 ( 3 ) 03BB05 2017
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Charge effects of ultrafine FET with nanodot type floating gate Reviewed International journal
Ban, T. and Migita, S. and Uraoka, Y. and Yamamoto, S.-I.
Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials 7543607 2016
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Ultra-short channel junctionless transistor with a one-dimensional nanodot array floating gate Reviewed International journal
Ban, T. and Uenuma, M. and Migita, S. and Okamoto, N. and Ishikawa, Y. and Yamashita, I. and Uraoka, Y.
Applied Physics Letters 106 ( 25 ) 253104 2015
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Evaluation of TaOx nanoparitcles for resistive random access memory Reviewed
Kado, K. and Ban, T. and Uenuma, M. and Ishikawa, Y. and Yamashita, I. and Uraoka, Y.
IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai 6602273 2013
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Memristive nanoparticles formed using a biotemplate Reviewed International journal
Uenuma, M. and Ban, T. and Okamoto, N. and Zheng, B. and Kakihara, Y. and Horita, M. and Ishikawa, Y. and Yamashita, I. and Uraoka, Y.
RSC Advances 3 ( 39 ) 18044 - 18048 2013