YANAGISAWA Junichi

写真a

Title

Professor

Research Fields, Keywords

Semiconductor process engineering, Ion beam engineering

Mail Address

E-mail address

Graduating School 【 display / non-display

  • Shinshu University  Faculty of Science  1986.03

Graduate School 【 display / non-display

  • Osaka Prefecture University  Graduate School, Division of General Science  Master's Course  1988.03

  • Osaka University  Graduate School, Division of Engineering Science  Doctor's Course  1991.03

Campus Career 【 display / non-display

  • University of Shiga Prefecture  School of Engineering  Department of Electronic Systems Engineering  Professor   2008.04 - Now

Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display

  • Electron device/Electronic equipment

  • Thin film/Surface and interfacial physical properties

  • Electronic materials/Electric materials

 

Papers 【 display / non-display

  • Reflective waveplate with subwavelength grating structure

    Itsunari Yamada, Takaaki Ishihara and Junichi Yanagisawa

     Jpn. J. Appl. Phys.  54   092203-1 - 0922003-4  2015

    Joint Work  Joint(The vice charge)

  • Deformable Silicone Grating with Submicrometer Period

    T. Ishihara, I. Yamada, J. Yanagisawa, J. Nishii, and M. Saito

     Jpn. J. Appl. Phys.    2014

    Joint Work  Joint(The vice charge)

  • Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes

    Hideo Takeuchi , Junichi Yanagisawa, Shuichi Tsuruta, Hisashi Yamada, Makoto Hata, and Masaaki Nakayama

     Journal of Luminescence  131   531 - 534  2011

    Joint Work  Joint(The vice charge)

  • Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition

    K. Ishiizumi, J. Kikkawa, Y. Nakamura, A. Sakai, and J. Yanagisawa

     Jpn. J. Appl. Phys.  50   06GC02 -  2011

    Joint Work  Joint(The main charge)

  • Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures

    Hideo Takeuchi, Junichi Yanagisawa, Shuichi Tsuruta, Hishashi Yamada, Masahiko Hata, and Masaaki Nakayama

     Physica Status Solidi C  8   343 - 345  2011

    Joint Work  Joint(The vice charge)

  • Frequency shift of terahertz electromagnetic waves originating from sub-picosecond-range carrier transport in undoped GaAs/n-type GaAs epitaxial layer structures

    Hideo Takeuchi, Junichi Yanagisawa, Shuichi Tsuruta, Hisashi Yamada, Makoto Hata, and Masaaki Nakayama

     Japanese Journal of Applied Physics  49   082001 1-5 -  2010

    Joint Work  Joint(The vice charge)

  • Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves

    H. Takeuchi, J. Yanagisawa, and M.Nakayama

     Physics Procedia  3   1109 - 1113  2010

    Joint Work  Joint(The vice charge)

  • Observation and quantification of the direction reversal of the surface band bending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements

    Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama

     Physica Status Solidi C  7   1844 - 1846  2010

    Joint Work  Joint(The vice charge)

  • Fabrication of micro-fluid-channel structures by focused ion beam technique

    J. Yanagisawa, H. Kobayashi, K. Koreyama, and Y. Akasaka

     Mater. Res. Soc. Symp. Proc.  1181   1181-DD03-01 -  2009

    Joint Work  Joint(The main charge)

  • Effect of Annealing on Mechanical Properties of Materials Formed by Focused Au or Si Ion-Beam-Induced Chemical Vapor Deposition Using Phenanthrene

    T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, and J. Yanagisawa

     Jpn. J. Appl. Phys.  48   06FB03 -  2009

    Joint Work  Joint(The main charge)

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Conferences 【 display / non-display

  • Formation of Au nano-particles by Au and Si ion implantation on SiO2 films using Au-Si alloyed liquid metal ion source and thermal annealing under atmosphere

    32nd International Microprocesses and Nanotechnology Conference  2019.10

  • 60 keV Ar Ion Irradiation Effect on Ge(110) Surfaces

    31st International Microprocesses and Nanotechnology Conference  2018.11

  • Periodic Diamond Pattern Formation on Resist by Simple Orthogonally-Crossed Two Line-Scans of the Electron Beam

    31st International Microprocesses and Nanotechnology Conference  2018.11

  • Oxidation of Si and Ti surfaces using Oxygen plasma treatment

    The 14th International Symposium on Sputtering & Plasma Processes  2017.07

  • Formation of Nano-bump Structures of Si(100) Surfaces by Low-Energy Ga Ion Irradiation

    2016 International Microprocesses and Nanotechnology Conference  2016.11

  • Control of Size and Shape of Nano-Porous Structure Formed on Ge (110) Surface by High –Energy Focused Ga Ion Beam Irradiation

    2014 International Microprocesses and Nanotechnology Conference  2014.11

  • Deformable silicone grating fabricated with a photo-imprinted polymer mold

    26th International Microprocesses and Nanotechnology Conference  2013.11

  • Fabrication of silicone grating using a photoimprinted polymer mold and period control by mechanical destortion

    International Conference on Solid State Devices and Materials  2013.09

  • Effect of Ion Implanted Damage on the Growth of Gallium Nitride on Silicon Nitride Surfaces using Metal-Organic Chemical Vapor Deposition

    2010 International Microprocesses and Nanotechnology Conference  2010.11

  • Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes

    The 17th International Conference on Dynamical Processes in Excited States of Solids (DPC'10)  2010.06

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