Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves

H. Takeuchi, J. Yanagisawa, and M.Nakayama

Physics Procedia   3   1109 - 1113   2010

Frequency shift of terahertz electromagnetic waves originating from sub-picosecond-range carrier transport in undoped GaAs/n-type GaAs epitaxial layer structures

Hideo Takeuchi, Junichi Yanagisawa, Shuichi Tsuruta, Hisashi Yamada, Makoto Hata, and Masaaki Nakayama

Japanese Journal of Applied Physics   49   082001 1-5   2010

Observation and quantification of the direction reversal of the surface band bending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements

Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama

Physica Status Solidi C   7   1844 - 1846   2010

集束イオンビーム支援堆積法で形成したカーボン系薄膜の機械的特性

柳沢淳一

電気学会論文誌Ａ   130   949 - 954   2010

Effect of Annealing on Mechanical Properties of Materials Formed by Focused Au or Si Ion-Beam-Induced Chemical Vapor Deposition Using Phenanthrene

T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, and J. Yanagisawa

Jpn. J. Appl. Phys.   48   06FB03   2009

Fabrication of micro-fluid-channel structures by focused ion beam technique

J. Yanagisawa, H. Kobayashi, K. Koreyama, and Y. Akasaka

Mater. Res. Soc. Symp. Proc.   1181   1181-DD03-01   2009

Intense emission of terahertz electromagnetic wave from an undoped GaAs/n -type GaAs epitaxial layer structure

H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama

Physica Status Solidi ©   6   1513 - 1516   2009

Effects of nitrogen incorporation on a direction of a surface band bending investigated by polarity of terahertz electromagnetic waves in GaAs(1-x)N(x) epitaxial layers

H. Takeuchi, J. Yanagisawa, J. Hashimoto, and M. Nakayama

J. Appl. Phys.   105   093539   2009

Characterization of Deposited Materials Formed by Focused Ion Beam-Induced Chemical Vapor Deposition Using AuSi Alloyed Metal Source

T. Yo, H. Tanaka, K. Koreyama, T. Nagata, Y. Sakuma, K. Nakajima, T. Chikyow, J. Yanagisawa, and A. Sakai

Jpn. J. Appl. Phys.   47   5018 - 5021   2008

Enhancement of terahertz electromagnetic wave emission from an undoped GaAs/n-type GaAs epitaxial layer structure

H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama

Appl. Phys. Lett.   93   081916   2008

Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy

J. Yanagisawa, H. Matsumoto, T. Fukuyama, Y. Shiraishi, T. Yodo, and Y. Akasaka

Nucl. Instr. and Meth. B   257   348 - 351   2007

Deposition of carbonaceous structures using focused Au and Si ion-beam-induced chemical vapor deposition methods

R. Okada, T. Yo, J. Yanagisawa, and S. Matsui

J. Vac. Sci. Technol. B   25   2180 - 2183   2007

Nano-porous structure formations on germanium surfaces by focused ion beam irradiations

J. Yanagisawa, K. Takarabe, K. Ogushi, K. Gamo, and Y. Akasaka

J. Phys.: Condens. Matter   19   445002   2007

Formation of local ferromagnetic areas on GaAs by focused Mn ion beam implantation

M. Kasai, J. Yanagisawa, H. Tanaka, S. Hasegawa, H. Asahi, K. Gamo, and Y. Akasaka

Nucl. Instr. and Meth. B   242   240 - 243   2006

Formation and characterization of swelled nano-porous structures on ion-irradiated Ge surfaces

J. Yanagisawa, K. Ogushi, K. Takarabe, K. Gamo, and Y. Akasaka

Mater. Res. Soc. Symp. Proc.   908E   0908-OO11-04.1   2006

Formation of GaN layer on SiN surface using low-energy Ga ion implantation

J. Yanagisawa, M. Toda, T. Kitamura, H. Matsumoto, and Y. Akasaka

J. Vac. Sci. Technol. B   23   3205 - 3208   2005

Formation of GaN films by Ga ion direct deposition under nitrogen radical atmosphere

M. Toda, J. Yanagisawa, K. Gamo, and Y. Akasaka

J. Vac. Sci. Technol. B   22   3012 - 3015   2004

Maskless Mn implantation in GaAs using focused Mn ion beam

M. Itou, M. Kasai, T. Kimura, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo

Nucl. Instr. and Meth. B   206   1013 - 1017   2003

In situ Si Doping in GaAs using Low-energy Focused Si Ion Beam/Molecular Beam Epitaxy Combined System

K. Kubo, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo

Proc. of 17th International Conference on the Application of Accelerators in Research and Industry   662 - 665   2003

Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system

T. Hada, H. Miyamoto, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo

Nucl. Instr. and Meth. B   175-177   751 - 755   2001

Formation of narrow grooves on thin metal layer by focused ion beam etching

M. Yoshida, S. Murakami, M. Nakayama, J. Yanagisawa, F. Wakaya, T. Kaito, and K. Gamo

Microelectronic Engineering   57-58   877 - 882   2001

Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth

T. Hada, T. Goto, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo

J. Vac. Sci. Technol. B   18   3158 - 3161   2000

Galvanomagnetic effect of submicron exchange-coupled Co/Ni wire

T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, K. Gamo

Jpn. J. Appl. Phys.   39   6526 - 6529   2000

Magnetization process and resistance jumps in a submicron-scale cross-shaped Co wire

T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, and K. Gamo

J. Mag. Mag. Mat.   222   79 - 85   2000

Metastable domain structures of ferromagnetic microstructures observed by soft x-ray magnetic circular dichroism microscopy

S. Imada, S. Ueda, R. Jung, Y. Saitoh, M. Kotsugi, W. Kuch, J. Gilles, S. Kang, F. Offi, J. Kirschner, H. Daimon, T. Kimura, J. Yanagisawa, K. Gamo, and S. Suga

Jpn. J. Appl. Phys., Part 2   39   L585 - L587   2000

Carier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system

T. Goto, T. Hada, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo

Appl. Surface Sci.   159-160   277 - 281   2000

Low-energy focused Si ion beam deposition under oxygen atmosphere

J. Yanagisawa, Y. Wang, T. Hada, K. Murase, and K. Gamo

Nucl. Instr. and Meth. B   148   42 - 46   1999

Exchange interaction from current and voltage probes in galvanomagnetic effect in polycrystal Co thin film

T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, and K. Gamo

Jpn. J. Appl. Phys.   38   4737 - 4740   1999

Focused ion beam process for formation of a metal/insulator/metal double tunnel junction

M. Nakayama, J. Yanagisawa, F. Wakaya, and K. Gamo

Jpn. J. Appl. Phys.   38   7151 - 7154   1999

Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system

J. Yanagisawa, T. Goto, T. Hada, M. Nakai, F. Wakaya, Y. Yuba, and K. Gamo

J. Vac. Sci. Technol. B   17   3072 - 3074   1999

Interface states induced in GaAs by growth interruption during an in situ process

F. Wakaya, T. Matsubara, M. Nakayama, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

J. Vac. Sci. Technol. B   16   2313 - 2316   1998

Effects of growth interruption in in situ process for buried quantum structures

F. Wakaya, T. Matsubara, M. Nakayama, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

Microelectronic Engineering   41/42   591 - 594   1998

Focused ion beam etching of resist/Ni multilayer films and applications to metal island structure formation

M. Nakayama, F. Wakaya, J. Yanagisawa, and K. Gamo

J. Vac. Sci. Technol. B   16   2511 - 2514   1998

Direct deposition of silicon and silicon-oxide films using low-energy Si focused ion beam

J. Yanagisawa, H. Nakayama, O. Matsuda, K. Murase, and K. Gamo

Nucl. Instr. Methods B   127/128   893 - 896   1997

Fabrication of buried quantum structures using FIB-MBE total vacuum process

F. Wakaya, J. Yanagisawa, T. Matsubara, H. Nakayama, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

Microelectronic Engineering   35   451 - 454   1997

Characterization of laterally selected Si doped layer formed in GaAs using a low-energy FIB-MBE combined system

H. Nakayama, J. Yanagisawa, F. Wakaya, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

Mat. Res. Soc. Symp. Proc.   438   187 - 192   1997

Characterization of Si-doped layer in GaAs fabricated by a focused ion beam/molecular beam epitaxy combined system

J. Yanagisawa, H. Nakayama, K. Oka, M. Nakai, F. Wakaya, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

J. Vac. Sci. Technol. B   15   2930 - 2933   1997

Formation of buried two-dimensional electron gas in GaAs by Si ion doping using MBE-FIB combined system

J. Yanagisawa, H. Nakayama, F. Wakaya, Y. Yuba, and K. Gamo

Mat. Res. Soc. Symp. Proc.   396   701 - 705   1996

Investigation of growth interruption in the UHV total vacuum process for buried quantum structures

F. Wakaya, T. Matsubara, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

Microelectronic Engineering   30   475 - 478   1996

Effects of growth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures

F. Wakaya, T. Matsubara, H. Nakayama, Y. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

Physica B   227   268 - 270   1996

Characterization of directly deposited silicon films using low-energy focused ion beam

J. Yanagisawa, N. Onishi, H. Nakayama, and K. Gamo

Jpn. J. Appl. Phys.   35   6584 - 6587   1996

Fabrication of laterally selected Si doped layer in GaAs using a low-energy focused ion beam/molecular beam epitaxy combined system

J. Yanagisawa, H. Nakayama, F. Wakaya, Y. Yuba, and K. Gamo

J. Vac. Sci. Technol. B   14   3938 - 3941   1996

Low-energy focused ion beam system and direct deposition of Au and Si

J. Yanagisawa, K. Kito, K. Monden, and K. Gamo

J. Vac. Sci. Technol. B   13   2621 - 2624   1995

Transport properties and fabrication of coupled electron waveguides

F. Wakaya, H. Otoi, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, K. Gamo, D. G. Hasko, G. A. C. Jones, and H. Ahmed

Jpn. J. Appl. Phys.   34   4446 - 448   1995

Flux dependence of implantation damage in GaAs induced by focused gallium ion beam

M. Takai, S. Hara, T. Kishimoto, and J. Yanagisawa

Proc. Ion Implantation Technology-94   856 - 859   1995

Nuclear microprobe analysis of implantation damage induced by focused gallium ion beams in GaAs

M. Takai, S. Hara, T. Kishimoto, and J. Yanagisawa

Nucl. Instr. Methods B   104   524 - 527   1995

Low energy ion irradiation effect on electron transport in GaAs/AlGaAs heterostructures

J. Yanagisawa, A. Nozawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

Mat. Res. Soc. Symp. Proc.   354   165 - 170   1995

Low energy focused ion beam system combined with molecular beam epitaxy system for fabrication of 3-dimensional buried semiconductor structures

J. Yanagisawa, K. Kito, K. Monden, and K. Gamo

Proc. SPIE (Electron-Beam Sources and Charged-Particle Optics)   2522   406 - 411   1995

Maskless deposition of Au on GaAs by low-energy focused ion beam

K. Kito, J. Yanagisawa, K. Monden, H. Nakayama, Y. Yuba, and K. Gamo

Jpn. J. Appl. Phys.   34   6853 - 6856   1995

Low energy focused ion beam and buried electron waveguides fabrication

F. Wakaya, A. Nozawa, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

Microelectronic Engineering   23   123 - 126   1994

Investigation of in situ process for GaAs/AlGaAs buried quantum wires

F. Wakaya, K. Umeda, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo

Jpn. J. Appl. Phys.   33   7223 - 7227   1994

Ion beam irradiation effect on solubility of spin-on glass to methanol

J. Yanagisawa, Y.-B. Koh, and K. Gamo

Nucl. Instr. Methods B   80/81   1128 - 1131   1993

Estimation of damage induced by focused Ga ion beam irradiation

T. Yamamoto, J. Yanagisawa, K. Gamo, S. Takaoka, and K. Murase

Jpn. J. Appl. Phys.   32   6268 - 6273   1993

Direct patterning of spin-on glass by focused ion beam irradiation

Y.-B. Koh, T. Goto, J. Yanagisawa, and K. Gamo

Jpn. J. Appl. Phys.   31   4479 - 4482   1992

Analysis of high energy ion scattering for the Si(111)7x7 DAS model by computer simulation

J. Yanagisawa and A. Yoshimori

Surface Sci.   231   297 - 303   1990

高結晶品質GaP薄膜の成膜法の検討と表面構造評価

山本純也，一宮正義，番貴彦，柳澤淳一

日本物理学会第78回年次大会  2023.9 

Au-Siイオン照射で形成されるSiO2表面のナノ構造を利用したAuナノ粒子の形成

内田 真裕人，一宮 正義，番 貴彦，柳澤 淳一

第70回応用物理学会春季学術講演会  2023.3 

高効率な光触媒効果の発現を目指した金属チタン表面の参加方法の検討と評価

中翔馬，一宮正義，柳澤淳一

応用物理学会関西支部第1回＋第2回合同講演会  2021.1 

AuSiイオン源からのAuおよびSiイオン同時照射と大気中での熱処理による石英ガラス基板内へのAuナノ粒子の形成

清水洋，一宮正義，柳澤淳一

応用物理学会関西支部第1回＋第2回合同講演会  2021.1 

Formation of Au nano-particles by Au and Si ion implantation on SiO2 films using Au-Si alloyed liquid metal ion source and thermal annealing under atmosphere International conference

Y. Okanishi, H. Shimizu, M. Ichimiya, and J. Yanagisawa

32nd International Microprocesses and Nanotechnology Conference  2019.10 

Ge(110)表面への低エネルギーArイオン照射効果と陽電子消滅を用いた表面構造の研究

塚元隆太，一宮正義，薮内敦，高宮幸一，木野村淳，柳沢淳一

第80回 応用物理学会秋季学術講演会  2019.9 

Au-Si共晶合金イオン源を用いたイオン注入によるシリコン酸化膜内での金ナノ粒子の形成と評価

岡西 裕太，一宮 正義，柳沢 淳一

第66回応用物理学会春季学術講演会  2019.3 

Au-Si共晶合金イオン源を用いたイオン注入によるSiO2薄膜内でのAuナノ粒子の形成プロセスの提案と反射率の評価

岡西 裕太，一宮 正義，柳沢 淳一

応用物理学会関西支部平成30年度第3回講演会「応用物理から生まれるビジネスの種」  2019.2 

Periodic Diamond Pattern Formation on Resist by Simple Orthogonally-Crossed Two Line-Scans of the Electron Beam International conference

K. Okada, T. Hioki, M. Ichimiya, and J. Yanagisawa

31st International Microprocesses and Nanotechnology Conference  2018.11 

60 keV Ar Ion Irradiation Effect on Ge(110) Surfaces International conference

R. Tsukamoto, M. Ichimiya, K. Takamiya, A. Kinomura, and J. Yanagisawa

31st International Microprocesses and Nanotechnology Conference  2018.11 

Ge(110)への60keVアルゴンイオン照射による表面形状効果

塚元隆太，一宮正義，高宮幸一，木野村淳，柳沢淳一

第79回 応用物理学会秋季学術講演会  2018.9 

Oxidation of Si and Ti surfaces using Oxygen plasma treatment International conference

S. Koyama and J. Yanagisawa

The 14th International Symposium on Sputtering & Plasma Processes  2017.7 

Formation of Nano-bump Structures of Si(100) Surfaces by Low-Energy Ga Ion Irradiation International conference

S. Suzue, Y. Matsui, and J. Yanagisawa

2016 International Microprocesses and Nanotechnology Conference  2016.11 

酸素プラズマを用いた金属チタンの酸化による光触媒材料の形成

山田将司, 柳沢 淳一

応用物理学会関西支部平成27年度第3回講演会  2016.2 

シリコンおよび窒化シリコン膜表面への低エネルギーガリウムイオン照射効果

山田将司, 松井 祐斗, 山田逸成, 柳沢 淳一

第76回応用物理学会秋季学術講演会  2015.9 

Control of Size and Shape of Nano-Porous Structure Formed on Ge (110) Surface by High –Energy Focused Ga Ion Beam Irradiation International conference

M. Yamada and J. Yanagisawa

2014 International Microprocesses and Nanotechnology Conference  2014.11 

Gaイオン照射した窒化シリコン薄膜へのGaN成長におけるイオン照射エネルギーの影響（II）

松井 祐斗, アザマト オシュラフノフ, 柳沢 淳一

第75回応用物理学会秋季学術講演会  2014.9 

集束イオンビームを用いたオールドライプロセスによるマイクロ流路デバイス作製プロセスの検討

安達 正哲, 吉田 黎, 柳沢 淳一

第61回応用物理学会春季学術講演会  2014.3 

Deformable silicone grating fabricated with a photo-imprinted polymer mold International conference

T. Ishihara, I. Yamada, J. Yanagisawa, J. Nishii, and M. Saito

26th International Microprocesses and Nanotechnology Conference  2013.11 

チタンの陽極酸化を利用した反射型偏光波長フィルタの作製と評価

横山遼, 山田逸成, 柳沢淳一

第22回日本光学会年次学術講演会  2013.11 

干渉露光と陽極酸化による酸化チタン格子の形成と光学評価

横山遼, 山田逸成, 柳沢淳一

平成25年度応用物理学会九州支部学術講演会  2013.11 

Fabrication of silicone grating using a photoimprinted polymer mold and period control by mechanical destortion International conference

T. Ishihara, I. Yamada, J. Yanagisawa, K. Koyama, T. Inoue, J. Nishii, and M. Saito

International Conference on Solid State Devices and Materials  2013.9 

チタンの陽極酸化を利用した反射型偏光波長フィルタの作製

横山遼, 山田逸成, 柳沢淳一

第74回応用物理学会秋季学術講演会  2013.9 

Gaイオン照射した窒化シリコン薄膜へのGaN成長におけるイオン照射エネルギーの影響

オシュラフノフ アザマト, 松井 祐斗, 佐藤 一成, 山本 喜之, 柳沢 淳一

第74回応用物理学会秋季学術講演会  2013.9 

サブ波長周期構造を利用した反射型波長板の作製と評価

石原隆明, 山田逸成, 柳沢淳一

第74回応用物理学会秋季学術講演会  2013.9 

サブ波長周期構造を利用した反射型波長板

石原隆明, 山田逸成, 柳沢淳一

第21回日本光学会年次学術講演会  2012.10 

MOCVD による窒化シリコン膜上へのGaN 成長におけるイオン照射効果

柳沢淳一

第58回応用物理学関係連合講演会2011年春季  2011.3 

Effect of Ion Implanted Damage on the Growth of Gallium Nitride on Silicon Nitride Surfaces　using Metal-Organic Chemical Vapor Deposition International conference

K. Ishiizumi, J. Kikkawa, Y. Nakamura, A. Sakai, and J. Yanagisawa

2010 International Microprocesses and Nanotechnology Conference  2010.11 

Analysis of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures using a time-partitioning Fourier transform method

H. Takeuchi, S. Tsuruta, J. Yanagisawa, H. Yamada, M. Hata, and M. Nakayama

日本物理学会2010年秋季大会  2010.9 

Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes International conference

Hideo Takeuchi, J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama

The 17th International Conference on Dynamical Processes in Excited States of Solids (DPC'10)  2010.6 

Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures International conference

Hideo Takeuchi , J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama

The 37th International Symposium on Compound Semiconductors (ICSC2010)  2010.6 

Polarity reversal of terahertz electromagnetic waves in GaAs-based dilute nitride epitaxial layers

H. Takeuchi , J. Yanagisawa, J. Hashimoto, and M. Nakayama

日本物理学会2010年春季大会  2010.3 

Layer-thickness dependence on THz electromagnetic wave generation from i-GaAs/n -GaAs epitaxial structures

S. Tsuruta, H. Takeuchi , J. Yanagisawa, H. Yamada, M. Hata, and M. Nakayama

日本物理学会2010年春季大会  2010.3 

Direction of the surface band bending in GaAs1-xNx investigated by terahertz electromagnetic wave and its quantification using photoreflectance measurements

H. Takeuchi, Jun Hashimoto, Junichi Yanagisawa, and Masaaki Nakayama

第20回光物性研究会  2009.12 

Maskless formation of patterned gallium nitride layer on low-energy Ga-ion-implanted silicon nitride surface by metal-organic chemical vapor deposition International conference

K. Ishiizumi, J. Kikkawa, Y. Nakamura, A. Sakai, and J. Yanagisawa

22nd International Microprocesses and Nanotechnology Conference  2009.11 

Observation and quantification of the direction reversal of the surface band herebending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements International conference

Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama

The 8th International Conference on Nitride Semiconductors (ICNS-8)  2009.10 

Generation of intense terahertz electromagnetic wave in undoped GaAs/n-type GaAs epitaxial layer structures

H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama

日本物理学会2009年秋季大会  2009.9 

Surface modification of SiNx to GaN by Ga ion implantation to form a matrix for selective growth of GaN by MOCVD International conference

J. Yanagisawa, K. Ishiizumi, and A. Sakai

16th International Conference on Surface Modification of Materials by Ion Beams  2009.9 

集束イオンビーム支援堆積法で形成したカーボン系薄膜の機械的特性のイオン種依存性

柳沢淳一

電気学会プラズマ・パルスパワー・放電合同研究会  2009.8 

Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves International conference

Hideo Takeuchi, Junichi Yanagisawa, and Masaaki Nakayama

The 14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14)  2009.7 

Fabrication of micro fluid channel structures by focused ion beam techniques Invited International conference

J. Yanagisawa, H. Kobayashi, K. Koreyama, and Y. Akasaka

The MRS 2009 Spring Meeting  2009.4 

FIB-CVD法で作製したカーボン系堆積物におけるアニールの影響

楊卓真，酒井朗, 柳沢淳一

第56回応用物理学関係連合講演会2009年春季  2009.3 

Gaイオン注入したシリコン窒化膜上へのMOCVDによるGaNの選択成長

石泉和也, 柳沢淳一, 酒井朗

第56回応用物理学関係連合講演会2009年春季  2009.3 

集束イオンビームで形成した多孔質Ge表面構造のプラズマ処理による改質の可能性

柳沢淳一

電気学会プラズマ研究会  2008.12 

Enhancement mechanism of terahertz electromagnetic wave emission in undoped GaAs/n-type GaAs epitaxial layer structures

H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama

第19回光物性研究会  2008.12 

Annealing effect of deposited materials formed by focused Au or Si ion beam-induced chemical vapor deposition using phenanthrene International conference

T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, and J. Yanagisawa

21th International Microprocesses and Nanotechnology Conference  2008.10 

Intense emission of THz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure International conference

Hideo Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama

The 35th International Symposium on Compound Semiconductors (ICSC2008)  2008.9 

Nano-indentation measurement of carbonaceous films formed by focused ion beam-induced chemical vapor deposition (FIB-CVD) using Au or Si ions with phenanthrene International conference

T. Yo, H. Tanaka, K. Nakamatsu, S. Matsui, A. Sakai, and J. Yanagisawa

16th International Conference on Ion Beam Modification of Materials  2008.8 

量子力学概論

2009.4 Institution：滋賀県立大学

電子システム工学演習Ⅱ

2009.4 - 2010.3 Institution：滋賀県立大学

電子システム工学実験Ⅱ

2009.4 - 2010.3 Institution：滋賀県立大学

電子システム工学実験Ⅰ

2009.4 - 2010.3 Institution：滋賀県立大学

電子材料

2009.4 - 2010.3 Institution：滋賀県立大学

人間探求学

2009.4 - 2010.3 Institution：滋賀県立大学

電子社会と人間

2009.4 - 2010.3 Institution：滋賀県立大学

電子システム特論

2009.4 - 2010.3 Institution：滋賀県立大学

電子社会と人間

2008.4 Institution：滋賀県立大学

人間探求学

2008.4 Institution：滋賀県立大学

電子材料

2008.4 - 2009.3 Institution：滋賀県立大学

電子システム特論

2008.4 - 2009.3 Institution：滋賀県立大学