Organization
Faculty of Advanced Engineering
Department
School of Engineering Department of Electronic Systems Engineering
Title
Professor
External link
YANAGISAWA Junichi
Education
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Osaka University Graduate School, Division of Engineering Science
Course completed： Doctor's Course
Country： Japan
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Osaka Prefecture University Graduate School, Division of General Science
Course completed： Master's Course
Country： Japan
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Shinshu University Faculty of Science
Country： Japan
Degree
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工学博士 ( 1991.3 大阪大学 )
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学術修士 ( 1988.3 大阪府立大学 )
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理学士 ( 1986.3 信州大学 )
Research Field
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Semiconductor process engineering, Ion beam engineering
Research Experience
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The University of Shiga Prefecture Professor
2008.4
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大阪大学大学院基礎工学研究科 准教授
2007.4 - 2008.3
Country：Japan
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大阪大学大学院基礎工学研究科 助教授
2003.4 - 2007.3
Country：Japan
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大阪大学大学院基礎工学研究科 講師
1997.4 - 2003.3
Country：Japan
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大阪大学基礎工学部 助手
1991.4 - 1997.3
Country：Japan
Association Memberships
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日本表面真空学会
2017.6
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日本物理教育学会
2012.12
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日本高圧力学会
2008.4
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応用物理学会
2008.4
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日本物理学会
2008.4
Research Areas
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Nanotechnology/Materials / Thin film/surface and interfacial physical properties
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
Available Technology
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イオンビームプロセスを主とした超微細加工技術の新展開
Papers
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Reflective waveplate with subwavelength grating structure
Itsunari Yamada, Takaaki Ishihara and Junichi Yanagisawa
Jpn. J. Appl. Phys. 54 092203-1 - 0922003-4 2015
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Deformable Silicone Grating with Submicrometer Period
T. Ishihara, I. Yamada, J. Yanagisawa, J. Nishii, and M. Saito
Jpn. J. Appl. Phys. 2014
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Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition
K. Ishiizumi, J. Kikkawa, Y. Nakamura, A. Sakai, and J. Yanagisawa
Jpn. J. Appl. Phys. 50 06GC02 2011
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Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes
Hideo Takeuchi , Junichi Yanagisawa, Shuichi Tsuruta, Hisashi Yamada, Makoto Hata, and Masaaki Nakayama
Journal of Luminescence 131 531 - 534 2011
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Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures
Hideo Takeuchi, Junichi Yanagisawa, Shuichi Tsuruta, Hishashi Yamada, Masahiko Hata, and Masaaki Nakayama
Physica Status Solidi C 8 343 - 345 2011
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Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves
H. Takeuchi, J. Yanagisawa, and M.Nakayama
Physics Procedia 3 1109 - 1113 2010
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Frequency shift of terahertz electromagnetic waves originating from sub-picosecond-range carrier transport in undoped GaAs/n-type GaAs epitaxial layer structures
Hideo Takeuchi, Junichi Yanagisawa, Shuichi Tsuruta, Hisashi Yamada, Makoto Hata, and Masaaki Nakayama
Japanese Journal of Applied Physics 49 082001 1-5 2010
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Observation and quantification of the direction reversal of the surface band bending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements
Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama
Physica Status Solidi C 7 1844 - 1846 2010
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集束イオンビーム支援堆積法で形成したカーボン系薄膜の機械的特性
柳沢淳一
電気学会論文誌Ａ 130 949 - 954 2010
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Effect of Annealing on Mechanical Properties of Materials Formed by Focused Au or Si Ion-Beam-Induced Chemical Vapor Deposition Using Phenanthrene
T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, and J. Yanagisawa
Jpn. J. Appl. Phys. 48 06FB03 2009
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Fabrication of micro-fluid-channel structures by focused ion beam technique
J. Yanagisawa, H. Kobayashi, K. Koreyama, and Y. Akasaka
Mater. Res. Soc. Symp. Proc. 1181 1181-DD03-01 2009
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Intense emission of terahertz electromagnetic wave from an undoped GaAs/n -type GaAs epitaxial layer structure
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
Physica Status Solidi © 6 1513 - 1516 2009
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Effects of nitrogen incorporation on a direction of a surface band bending investigated by polarity of terahertz electromagnetic waves in GaAs(1-x)N(x) epitaxial layers
H. Takeuchi, J. Yanagisawa, J. Hashimoto, and M. Nakayama
J. Appl. Phys. 105 093539 2009
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Characterization of Deposited Materials Formed by Focused Ion Beam-Induced Chemical Vapor Deposition Using AuSi Alloyed Metal Source
T. Yo, H. Tanaka, K. Koreyama, T. Nagata, Y. Sakuma, K. Nakajima, T. Chikyow, J. Yanagisawa, and A. Sakai
Jpn. J. Appl. Phys. 47 5018 - 5021 2008
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Enhancement of terahertz electromagnetic wave emission from an undoped GaAs/n-type GaAs epitaxial layer structure
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
Appl. Phys. Lett. 93 081916 2008
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Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy
J. Yanagisawa, H. Matsumoto, T. Fukuyama, Y. Shiraishi, T. Yodo, and Y. Akasaka
Nucl. Instr. and Meth. B 257 348 - 351 2007
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Deposition of carbonaceous structures using focused Au and Si ion-beam-induced chemical vapor deposition methods
R. Okada, T. Yo, J. Yanagisawa, and S. Matsui
J. Vac. Sci. Technol. B 25 2180 - 2183 2007
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Nano-porous structure formations on germanium surfaces by focused ion beam irradiations
J. Yanagisawa, K. Takarabe, K. Ogushi, K. Gamo, and Y. Akasaka
J. Phys.: Condens. Matter 19 445002 2007
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Formation of local ferromagnetic areas on GaAs by focused Mn ion beam implantation
M. Kasai, J. Yanagisawa, H. Tanaka, S. Hasegawa, H. Asahi, K. Gamo, and Y. Akasaka
Nucl. Instr. and Meth. B 242 240 - 243 2006
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Formation and characterization of swelled nano-porous structures on ion-irradiated Ge surfaces
J. Yanagisawa, K. Ogushi, K. Takarabe, K. Gamo, and Y. Akasaka
Mater. Res. Soc. Symp. Proc. 908E 0908-OO11-04.1 2006
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Formation of GaN layer on SiN surface using low-energy Ga ion implantation
J. Yanagisawa, M. Toda, T. Kitamura, H. Matsumoto, and Y. Akasaka
J. Vac. Sci. Technol. B 23 3205 - 3208 2005
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Formation of GaN films by Ga ion direct deposition under nitrogen radical atmosphere
M. Toda, J. Yanagisawa, K. Gamo, and Y. Akasaka
J. Vac. Sci. Technol. B 22 3012 - 3015 2004
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Maskless Mn implantation in GaAs using focused Mn ion beam
M. Itou, M. Kasai, T. Kimura, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Nucl. Instr. and Meth. B 206 1013 - 1017 2003
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In situ Si Doping in GaAs using Low-energy Focused Si Ion Beam/Molecular Beam Epitaxy Combined System
K. Kubo, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Proc. of 17th International Conference on the Application of Accelerators in Research and Industry 662 - 665 2003
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Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system
T. Hada, H. Miyamoto, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Nucl. Instr. and Meth. B 175-177 751 - 755 2001
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Formation of narrow grooves on thin metal layer by focused ion beam etching
M. Yoshida, S. Murakami, M. Nakayama, J. Yanagisawa, F. Wakaya, T. Kaito, and K. Gamo
Microelectronic Engineering 57-58 877 - 882 2001
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Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth
T. Hada, T. Goto, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
J. Vac. Sci. Technol. B 18 3158 - 3161 2000
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Galvanomagnetic effect of submicron exchange-coupled Co/Ni wire
T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, K. Gamo
Jpn. J. Appl. Phys. 39 6526 - 6529 2000
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Magnetization process and resistance jumps in a submicron-scale cross-shaped Co wire
T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, and K. Gamo
J. Mag. Mag. Mat. 222 79 - 85 2000
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Metastable domain structures of ferromagnetic microstructures observed by soft x-ray magnetic circular dichroism microscopy
S. Imada, S. Ueda, R. Jung, Y. Saitoh, M. Kotsugi, W. Kuch, J. Gilles, S. Kang, F. Offi, J. Kirschner, H. Daimon, T. Kimura, J. Yanagisawa, K. Gamo, and S. Suga
Jpn. J. Appl. Phys., Part 2 39 L585 - L587 2000
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Carier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system
T. Goto, T. Hada, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Appl. Surface Sci. 159-160 277 - 281 2000
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Low-energy focused Si ion beam deposition under oxygen atmosphere
J. Yanagisawa, Y. Wang, T. Hada, K. Murase, and K. Gamo
Nucl. Instr. and Meth. B 148 42 - 46 1999
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Exchange interaction from current and voltage probes in galvanomagnetic effect in polycrystal Co thin film
T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, and K. Gamo
Jpn. J. Appl. Phys. 38 4737 - 4740 1999
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Focused ion beam process for formation of a metal/insulator/metal double tunnel junction
M. Nakayama, J. Yanagisawa, F. Wakaya, and K. Gamo
Jpn. J. Appl. Phys. 38 7151 - 7154 1999
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Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system
J. Yanagisawa, T. Goto, T. Hada, M. Nakai, F. Wakaya, Y. Yuba, and K. Gamo
J. Vac. Sci. Technol. B 17 3072 - 3074 1999
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Interface states induced in GaAs by growth interruption during an in situ process
F. Wakaya, T. Matsubara, M. Nakayama, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
J. Vac. Sci. Technol. B 16 2313 - 2316 1998
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Effects of growth interruption in in situ process for buried quantum structures
F. Wakaya, T. Matsubara, M. Nakayama, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 41/42 591 - 594 1998
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Focused ion beam etching of resist/Ni multilayer films and applications to metal island structure formation
M. Nakayama, F. Wakaya, J. Yanagisawa, and K. Gamo
J. Vac. Sci. Technol. B 16 2511 - 2514 1998
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Direct deposition of silicon and silicon-oxide films using low-energy Si focused ion beam
J. Yanagisawa, H. Nakayama, O. Matsuda, K. Murase, and K. Gamo
Nucl. Instr. Methods B 127/128 893 - 896 1997
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Fabrication of buried quantum structures using FIB-MBE total vacuum process
F. Wakaya, J. Yanagisawa, T. Matsubara, H. Nakayama, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 35 451 - 454 1997
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Characterization of laterally selected Si doped layer formed in GaAs using a low-energy FIB-MBE combined system
H. Nakayama, J. Yanagisawa, F. Wakaya, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Mat. Res. Soc. Symp. Proc. 438 187 - 192 1997
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Characterization of Si-doped layer in GaAs fabricated by a focused ion beam/molecular beam epitaxy combined system
J. Yanagisawa, H. Nakayama, K. Oka, M. Nakai, F. Wakaya, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
J. Vac. Sci. Technol. B 15 2930 - 2933 1997
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Formation of buried two-dimensional electron gas in GaAs by Si ion doping using MBE-FIB combined system
J. Yanagisawa, H. Nakayama, F. Wakaya, Y. Yuba, and K. Gamo
Mat. Res. Soc. Symp. Proc. 396 701 - 705 1996
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Investigation of growth interruption in the UHV total vacuum process for buried quantum structures
F. Wakaya, T. Matsubara, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 30 475 - 478 1996
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Effects of growth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures
F. Wakaya, T. Matsubara, H. Nakayama, Y. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Physica B 227 268 - 270 1996
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Characterization of directly deposited silicon films using low-energy focused ion beam
J. Yanagisawa, N. Onishi, H. Nakayama, and K. Gamo
Jpn. J. Appl. Phys. 35 6584 - 6587 1996
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Fabrication of laterally selected Si doped layer in GaAs using a low-energy focused ion beam/molecular beam epitaxy combined system
J. Yanagisawa, H. Nakayama, F. Wakaya, Y. Yuba, and K. Gamo
J. Vac. Sci. Technol. B 14 3938 - 3941 1996
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Low-energy focused ion beam system and direct deposition of Au and Si
J. Yanagisawa, K. Kito, K. Monden, and K. Gamo
J. Vac. Sci. Technol. B 13 2621 - 2624 1995
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Transport properties and fabrication of coupled electron waveguides
F. Wakaya, H. Otoi, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, K. Gamo, D. G. Hasko, G. A. C. Jones, and H. Ahmed
Jpn. J. Appl. Phys. 34 4446 - 448 1995
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Flux dependence of implantation damage in GaAs induced by focused gallium ion beam
M. Takai, S. Hara, T. Kishimoto, and J. Yanagisawa
Proc. Ion Implantation Technology-94 856 - 859 1995
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Nuclear microprobe analysis of implantation damage induced by focused gallium ion beams in GaAs
M. Takai, S. Hara, T. Kishimoto, and J. Yanagisawa
Nucl. Instr. Methods B 104 524 - 527 1995
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Low energy ion irradiation effect on electron transport in GaAs/AlGaAs heterostructures
J. Yanagisawa, A. Nozawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Mat. Res. Soc. Symp. Proc. 354 165 - 170 1995
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Low energy focused ion beam system combined with molecular beam epitaxy system for fabrication of 3-dimensional buried semiconductor structures
J. Yanagisawa, K. Kito, K. Monden, and K. Gamo
Proc. SPIE (Electron-Beam Sources and Charged-Particle Optics) 2522 406 - 411 1995
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Maskless deposition of Au on GaAs by low-energy focused ion beam
K. Kito, J. Yanagisawa, K. Monden, H. Nakayama, Y. Yuba, and K. Gamo
Jpn. J. Appl. Phys. 34 6853 - 6856 1995
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Low energy focused ion beam and buried electron waveguides fabrication
F. Wakaya, A. Nozawa, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 23 123 - 126 1994
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Investigation of in situ process for GaAs/AlGaAs buried quantum wires
F. Wakaya, K. Umeda, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Jpn. J. Appl. Phys. 33 7223 - 7227 1994
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Ion beam irradiation effect on solubility of spin-on glass to methanol
J. Yanagisawa, Y.-B. Koh, and K. Gamo
Nucl. Instr. Methods B 80/81 1128 - 1131 1993
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Estimation of damage induced by focused Ga ion beam irradiation
T. Yamamoto, J. Yanagisawa, K. Gamo, S. Takaoka, and K. Murase
Jpn. J. Appl. Phys. 32 6268 - 6273 1993
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Direct patterning of spin-on glass by focused ion beam irradiation
Y.-B. Koh, T. Goto, J. Yanagisawa, and K. Gamo
Jpn. J. Appl. Phys. 31 4479 - 4482 1992
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Analysis of high energy ion scattering for the Si(111)7x7 DAS model by computer simulation
J. Yanagisawa and A. Yoshimori
Surface Sci. 231 297 - 303 1990
Books etc
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GaNパワーデバイスの技術展開
江川孝志, 他（ Role： Contributor）
サイエンス＆テクノロジー（株） 2012.4
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ナノバイオ大事典
山根恒夫, 松永是, 民谷栄一 監修（ Role： Joint author）
株式会社テクノシステム 2007.1
Industrial property rights
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窒化物半導体成長用基板
佐藤一成, 山本喜之, 柳沢淳一
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窒化ガリウム成長用基板及びその製造方法
柳澤 淳一
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検査リペア装置
柳澤 淳一
Research Projects
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集束イオンビームによるバイオチップ加工
2003.4
経常研究 集束イオンビーム、バイオチップ、マスクレス加工
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低エネルギーイオンビームプロセスに関する研究
1993.4
経常研究 シリコン、シリコン酸化物、薄膜、窒化ガリウム
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半導体極微構造加工に関する研究
1991.4
経常研究 極微加工、半導体極微構造
Presentations
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Au-Siイオン照射で形成されるSiO2表面のナノ構造を利用したAuナノ粒子の形成
内田 真裕人，一宮 正義，番 貴彦，柳澤 淳一
第70回応用物理学会春季学術講演会 2023.3
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高効率な光触媒効果の発現を目指した金属チタン表面の参加方法の検討と評価
中翔馬，一宮正義，柳澤淳一
応用物理学会関西支部第1回＋第2回合同講演会 2021.1
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AuSiイオン源からのAuおよびSiイオン同時照射と大気中での熱処理による石英ガラス基板内へのAuナノ粒子の形成
清水洋，一宮正義，柳澤淳一
応用物理学会関西支部第1回＋第2回合同講演会 2021.1
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Formation of Au nano-particles by Au and Si ion implantation on SiO2 films using Au-Si alloyed liquid metal ion source and thermal annealing under atmosphere International conference
Y. Okanishi, H. Shimizu, M. Ichimiya, and J. Yanagisawa
32nd International Microprocesses and Nanotechnology Conference 2019.10
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Ge(110)表面への低エネルギーArイオン照射効果と陽電子消滅を用いた表面構造の研究
塚元隆太，一宮正義，薮内敦，高宮幸一，木野村淳，柳沢淳一
第80回 応用物理学会秋季学術講演会 2019.9
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Au-Si共晶合金イオン源を用いたイオン注入によるシリコン酸化膜内での金ナノ粒子の形成と評価
岡西 裕太，一宮 正義，柳沢 淳一
第66回応用物理学会春季学術講演会 2019.3
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Au-Si共晶合金イオン源を用いたイオン注入によるSiO2薄膜内でのAuナノ粒子の形成プロセスの提案と反射率の評価
岡西 裕太，一宮 正義，柳沢 淳一
応用物理学会関西支部平成30年度第3回講演会「応用物理から生まれるビジネスの種」 2019.2
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Periodic Diamond Pattern Formation on Resist by Simple Orthogonally-Crossed Two Line-Scans of the Electron Beam International conference
K. Okada, T. Hioki, M. Ichimiya, and J. Yanagisawa
31st International Microprocesses and Nanotechnology Conference 2018.11
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60 keV Ar Ion Irradiation Effect on Ge(110) Surfaces International conference
R. Tsukamoto, M. Ichimiya, K. Takamiya, A. Kinomura, and J. Yanagisawa
31st International Microprocesses and Nanotechnology Conference 2018.11
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Ge(110)への60keVアルゴンイオン照射による表面形状効果
塚元隆太，一宮正義，高宮幸一，木野村淳，柳沢淳一
第79回 応用物理学会秋季学術講演会 2018.9
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Oxidation of Si and Ti surfaces using Oxygen plasma treatment International conference
S. Koyama and J. Yanagisawa
The 14th International Symposium on Sputtering & Plasma Processes 2017.7
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Formation of Nano-bump Structures of Si(100) Surfaces by Low-Energy Ga Ion Irradiation International conference
S. Suzue, Y. Matsui, and J. Yanagisawa
2016 International Microprocesses and Nanotechnology Conference 2016.11
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酸素プラズマを用いた金属チタンの酸化による光触媒材料の形成
山田将司, 柳沢 淳一
応用物理学会関西支部平成27年度第3回講演会 2016.2
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シリコンおよび窒化シリコン膜表面への低エネルギーガリウムイオン照射効果
山田将司, 松井 祐斗, 山田逸成, 柳沢 淳一
第76回応用物理学会秋季学術講演会 2015.9
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Control of Size and Shape of Nano-Porous Structure Formed on Ge (110) Surface by High –Energy Focused Ga Ion Beam Irradiation International conference
M. Yamada and J. Yanagisawa
2014 International Microprocesses and Nanotechnology Conference 2014.11
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Gaイオン照射した窒化シリコン薄膜へのGaN成長におけるイオン照射エネルギーの影響（II）
松井 祐斗, アザマト オシュラフノフ, 柳沢 淳一
第75回応用物理学会秋季学術講演会 2014.9
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集束イオンビームを用いたオールドライプロセスによるマイクロ流路デバイス作製プロセスの検討
安達 正哲, 吉田 黎, 柳沢 淳一
第61回応用物理学会春季学術講演会 2014.3
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Deformable silicone grating fabricated with a photo-imprinted polymer mold International conference
T. Ishihara, I. Yamada, J. Yanagisawa, J. Nishii, and M. Saito
26th International Microprocesses and Nanotechnology Conference 2013.11
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チタンの陽極酸化を利用した反射型偏光波長フィルタの作製と評価
横山遼, 山田逸成, 柳沢淳一
第22回日本光学会年次学術講演会 2013.11
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干渉露光と陽極酸化による酸化チタン格子の形成と光学評価
横山遼, 山田逸成, 柳沢淳一
平成25年度応用物理学会九州支部学術講演会 2013.11
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Fabrication of silicone grating using a photoimprinted polymer mold and period control by mechanical destortion International conference
T. Ishihara, I. Yamada, J. Yanagisawa, K. Koyama, T. Inoue, J. Nishii, and M. Saito
International Conference on Solid State Devices and Materials 2013.9
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チタンの陽極酸化を利用した反射型偏光波長フィルタの作製
横山遼, 山田逸成, 柳沢淳一
第74回応用物理学会秋季学術講演会 2013.9
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Gaイオン照射した窒化シリコン薄膜へのGaN成長におけるイオン照射エネルギーの影響
オシュラフノフ アザマト, 松井 祐斗, 佐藤 一成, 山本 喜之, 柳沢 淳一
第74回応用物理学会秋季学術講演会 2013.9
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サブ波長周期構造を利用した反射型波長板の作製と評価
石原隆明, 山田逸成, 柳沢淳一
第74回応用物理学会秋季学術講演会 2013.9
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サブ波長周期構造を利用した反射型波長板
石原隆明, 山田逸成, 柳沢淳一
第21回日本光学会年次学術講演会 2012.10
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MOCVD による窒化シリコン膜上へのGaN 成長におけるイオン照射効果
柳沢淳一
第58回応用物理学関係連合講演会2011年春季 2011.3
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Effect of Ion Implanted Damage on the Growth of Gallium Nitride on Silicon Nitride Surfaces using Metal-Organic Chemical Vapor Deposition International conference
K. Ishiizumi, J. Kikkawa, Y. Nakamura, A. Sakai, and J. Yanagisawa
2010 International Microprocesses and Nanotechnology Conference 2010.11
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Analysis of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures using a time-partitioning Fourier transform method
H. Takeuchi, S. Tsuruta, J. Yanagisawa, H. Yamada, M. Hata, and M. Nakayama
日本物理学会2010年秋季大会 2010.9
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Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes International conference
Hideo Takeuchi, J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama
The 17th International Conference on Dynamical Processes in Excited States of Solids (DPC'10) 2010.6
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Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures International conference
Hideo Takeuchi , J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama
The 37th International Symposium on Compound Semiconductors (ICSC2010) 2010.6
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Polarity reversal of terahertz electromagnetic waves in GaAs-based dilute nitride epitaxial layers
H. Takeuchi , J. Yanagisawa, J. Hashimoto, and M. Nakayama
日本物理学会2010年春季大会 2010.3
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Layer-thickness dependence on THz electromagnetic wave generation from i-GaAs/n -GaAs epitaxial structures
S. Tsuruta, H. Takeuchi , J. Yanagisawa, H. Yamada, M. Hata, and M. Nakayama
日本物理学会2010年春季大会 2010.3
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Direction of the surface band bending in GaAs1-xNx investigated by terahertz electromagnetic wave and its quantification using photoreflectance measurements
H. Takeuchi, Jun Hashimoto, Junichi Yanagisawa, and Masaaki Nakayama
第20回光物性研究会 2009.12
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Maskless formation of patterned gallium nitride layer on low-energy Ga-ion-implanted silicon nitride surface by metal-organic chemical vapor deposition International conference
K. Ishiizumi, J. Kikkawa, Y. Nakamura, A. Sakai, and J. Yanagisawa
22nd International Microprocesses and Nanotechnology Conference 2009.11
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Observation and quantification of the direction reversal of the surface band herebending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements International conference
Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama
The 8th International Conference on Nitride Semiconductors (ICNS-8) 2009.10
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Generation of intense terahertz electromagnetic wave in undoped GaAs/n-type GaAs epitaxial layer structures
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
日本物理学会2009年秋季大会 2009.9
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Surface modification of SiNx to GaN by Ga ion implantation to form a matrix for selective growth of GaN by MOCVD International conference
J. Yanagisawa, K. Ishiizumi, and A. Sakai
16th International Conference on Surface Modification of Materials by Ion Beams 2009.9
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集束イオンビーム支援堆積法で形成したカーボン系薄膜の機械的特性のイオン種依存性
柳沢淳一
電気学会プラズマ・パルスパワー・放電合同研究会 2009.8
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Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves International conference
Hideo Takeuchi, Junichi Yanagisawa, and Masaaki Nakayama
The 14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14) 2009.7
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Fabrication of micro fluid channel structures by focused ion beam techniques Invited International conference
J. Yanagisawa, H. Kobayashi, K. Koreyama, and Y. Akasaka
The MRS 2009 Spring Meeting 2009.4
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FIB-CVD法で作製したカーボン系堆積物におけるアニールの影響
楊卓真，酒井朗, 柳沢淳一
第56回応用物理学関係連合講演会2009年春季 2009.3
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Gaイオン注入したシリコン窒化膜上へのMOCVDによるGaNの選択成長
石泉和也, 柳沢淳一, 酒井朗
第56回応用物理学関係連合講演会2009年春季 2009.3
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集束イオンビームで形成した多孔質Ge表面構造のプラズマ処理による改質の可能性
柳沢淳一
電気学会プラズマ研究会 2008.12
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Enhancement mechanism of terahertz electromagnetic wave emission in undoped GaAs/n-type GaAs epitaxial layer structures
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
第19回光物性研究会 2008.12
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Annealing effect of deposited materials formed by focused Au or Si ion beam-induced chemical vapor deposition using phenanthrene International conference
T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, and J. Yanagisawa
21th International Microprocesses and Nanotechnology Conference 2008.10
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Intense emission of THz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure International conference
Hideo Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
The 35th International Symposium on Compound Semiconductors (ICSC2008) 2008.9
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Nano-indentation measurement of carbonaceous films formed by focused ion beam-induced chemical vapor deposition (FIB-CVD) using Au or Si ions with phenanthrene International conference
T. Yo, H. Tanaka, K. Nakamatsu, S. Matsui, A. Sakai, and J. Yanagisawa
16th International Conference on Ion Beam Modification of Materials 2008.8
Teaching Experience
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基礎電磁気学（機械）
2020.4 Institution：滋賀県立大学
Level：Undergraduate (specialized)
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テクニカルコミュニケーション
2016.4 Institution：滋賀県立大学
Level：Graduate (liberal arts)
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荷電粒子ビーム工学
2012.4 Institution：滋賀県立大学
Level：Postgraduate
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電子デバイス
2010.4 Institution：滋賀県立大学
Level：Undergraduate (specialized)
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量子力学概論
2009.4 Institution：滋賀県立大学
Level：Undergraduate (specialized)
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半導体基礎
2009.4 Institution：滋賀県立大学
Level：Undergraduate (specialized)
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電子システム工学演習Ⅱ
2009.4 - 2010.3 Institution：滋賀県立大学
Level：Undergraduate (specialized)
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電子システム工学実験Ⅱ
2009.4 - 2010.3 Institution：滋賀県立大学
Level：Undergraduate (specialized)
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電子システム工学実験Ⅰ
2009.4 - 2010.3 Institution：滋賀県立大学
Level：Undergraduate (specialized)
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電子材料
2009.4 - 2010.3 Institution：滋賀県立大学
Level：Undergraduate (specialized)
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人間探求学
2009.4 - 2010.3 Institution：滋賀県立大学
Level：Undergraduate (liberal arts)
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電子社会と人間
2009.4 - 2010.3 Institution：滋賀県立大学
Level：Undergraduate (liberal arts)
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電子システム特論
2009.4 - 2010.3 Institution：滋賀県立大学
-
人間探求学
2008.4 Institution：滋賀県立大学
Level：Undergraduate (liberal arts)
-
電子社会と人間
2008.4 Institution：滋賀県立大学
Level：Undergraduate (liberal arts)
-
電子材料
2008.4 - 2009.3 Institution：滋賀県立大学
Level：Undergraduate (specialized)
-
電子システム特論
2008.4 - 2009.3 Institution：滋賀県立大学