Presentations -
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Observation and quantification of the direction reversal of the surface band herebending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements International conference
Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama
The 8th International Conference on Nitride Semiconductors (ICNS-8) 2009.10
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Generation of intense terahertz electromagnetic wave in undoped GaAs/n-type GaAs epitaxial layer structures
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
日本物理学会2009年秋季大会 2009.9
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Surface modification of SiNx to GaN by Ga ion implantation to form a matrix for selective growth of GaN by MOCVD International conference
J. Yanagisawa, K. Ishiizumi, and A. Sakai
16th International Conference on Surface Modification of Materials by Ion Beams 2009.9
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集束イオンビーム支援堆積法で形成したカーボン系薄膜の機械的特性のイオン種依存性
柳沢淳一
電気学会プラズマ・パルスパワー・放電合同研究会 2009.8
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Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves International conference
Hideo Takeuchi, Junichi Yanagisawa, and Masaaki Nakayama
The 14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14) 2009.7
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Fabrication of micro fluid channel structures by focused ion beam techniques Invited International conference
J. Yanagisawa, H. Kobayashi, K. Koreyama, and Y. Akasaka
The MRS 2009 Spring Meeting 2009.4
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FIB-CVD法で作製したカーボン系堆積物におけるアニールの影響
楊卓真，酒井朗, 柳沢淳一
第56回応用物理学関係連合講演会2009年春季 2009.3
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Gaイオン注入したシリコン窒化膜上へのMOCVDによるGaNの選択成長
石泉和也, 柳沢淳一, 酒井朗
第56回応用物理学関係連合講演会2009年春季 2009.3
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集束イオンビームで形成した多孔質Ge表面構造のプラズマ処理による改質の可能性
柳沢淳一
電気学会プラズマ研究会 2008.12
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Enhancement mechanism of terahertz electromagnetic wave emission in undoped GaAs/n-type GaAs epitaxial layer structures
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
第19回光物性研究会 2008.12
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Annealing effect of deposited materials formed by focused Au or Si ion beam-induced chemical vapor deposition using phenanthrene International conference
T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, and J. Yanagisawa
21th International Microprocesses and Nanotechnology Conference 2008.10
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Intense emission of THz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure International conference
Hideo Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
The 35th International Symposium on Compound Semiconductors (ICSC2008) 2008.9
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Nano-indentation measurement of carbonaceous films formed by focused ion beam-induced chemical vapor deposition (FIB-CVD) using Au or Si ions with phenanthrene International conference
T. Yo, H. Tanaka, K. Nakamatsu, S. Matsui, A. Sakai, and J. Yanagisawa
16th International Conference on Ion Beam Modification of Materials 2008.8