Papers - YANAGISAWA Junichi
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Reflective waveplate with subwavelength grating structure
Itsunari Yamada, Takaaki Ishihara and Junichi Yanagisawa
Jpn. J. Appl. Phys. 54 092203-1 - 0922003-4 2015
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Deformable Silicone Grating with Submicrometer Period
T. Ishihara, I. Yamada, J. Yanagisawa, J. Nishii, and M. Saito
Jpn. J. Appl. Phys. 2014
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Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition
K. Ishiizumi, J. Kikkawa, Y. Nakamura, A. Sakai, and J. Yanagisawa
Jpn. J. Appl. Phys. 50 06GC02 2011
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Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes
Hideo Takeuchi , Junichi Yanagisawa, Shuichi Tsuruta, Hisashi Yamada, Makoto Hata, and Masaaki Nakayama
Journal of Luminescence 131 531 - 534 2011
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Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures
Hideo Takeuchi, Junichi Yanagisawa, Shuichi Tsuruta, Hishashi Yamada, Masahiko Hata, and Masaaki Nakayama
Physica Status Solidi C 8 343 - 345 2011
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Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves
H. Takeuchi, J. Yanagisawa, and M.Nakayama
Physics Procedia 3 1109 - 1113 2010
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Frequency shift of terahertz electromagnetic waves originating from sub-picosecond-range carrier transport in undoped GaAs/n-type GaAs epitaxial layer structures
Hideo Takeuchi, Junichi Yanagisawa, Shuichi Tsuruta, Hisashi Yamada, Makoto Hata, and Masaaki Nakayama
Japanese Journal of Applied Physics 49 082001 1-5 2010
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Observation and quantification of the direction reversal of the surface band bending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements
Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama
Physica Status Solidi C 7 1844 - 1846 2010
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集束イオンビーム支援堆積法で形成したカーボン系薄膜の機械的特性
柳沢淳一
電気学会論文誌Ａ 130 949 - 954 2010
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Effect of Annealing on Mechanical Properties of Materials Formed by Focused Au or Si Ion-Beam-Induced Chemical Vapor Deposition Using Phenanthrene
T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, and J. Yanagisawa
Jpn. J. Appl. Phys. 48 06FB03 2009
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Fabrication of micro-fluid-channel structures by focused ion beam technique
J. Yanagisawa, H. Kobayashi, K. Koreyama, and Y. Akasaka
Mater. Res. Soc. Symp. Proc. 1181 1181-DD03-01 2009
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Intense emission of terahertz electromagnetic wave from an undoped GaAs/n -type GaAs epitaxial layer structure
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
Physica Status Solidi © 6 1513 - 1516 2009
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Effects of nitrogen incorporation on a direction of a surface band bending investigated by polarity of terahertz electromagnetic waves in GaAs(1-x)N(x) epitaxial layers
H. Takeuchi, J. Yanagisawa, J. Hashimoto, and M. Nakayama
J. Appl. Phys. 105 093539 2009
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Characterization of Deposited Materials Formed by Focused Ion Beam-Induced Chemical Vapor Deposition Using AuSi Alloyed Metal Source
T. Yo, H. Tanaka, K. Koreyama, T. Nagata, Y. Sakuma, K. Nakajima, T. Chikyow, J. Yanagisawa, and A. Sakai
Jpn. J. Appl. Phys. 47 5018 - 5021 2008
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Enhancement of terahertz electromagnetic wave emission from an undoped GaAs/n-type GaAs epitaxial layer structure
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
Appl. Phys. Lett. 93 081916 2008
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Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy
J. Yanagisawa, H. Matsumoto, T. Fukuyama, Y. Shiraishi, T. Yodo, and Y. Akasaka
Nucl. Instr. and Meth. B 257 348 - 351 2007
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Deposition of carbonaceous structures using focused Au and Si ion-beam-induced chemical vapor deposition methods
R. Okada, T. Yo, J. Yanagisawa, and S. Matsui
J. Vac. Sci. Technol. B 25 2180 - 2183 2007
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Nano-porous structure formations on germanium surfaces by focused ion beam irradiations
J. Yanagisawa, K. Takarabe, K. Ogushi, K. Gamo, and Y. Akasaka
J. Phys.: Condens. Matter 19 445002 2007
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Formation of local ferromagnetic areas on GaAs by focused Mn ion beam implantation
M. Kasai, J. Yanagisawa, H. Tanaka, S. Hasegawa, H. Asahi, K. Gamo, and Y. Akasaka
Nucl. Instr. and Meth. B 242 240 - 243 2006
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Formation and characterization of swelled nano-porous structures on ion-irradiated Ge surfaces
J. Yanagisawa, K. Ogushi, K. Takarabe, K. Gamo, and Y. Akasaka
Mater. Res. Soc. Symp. Proc. 908E 0908-OO11-04.1 2006
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Formation of GaN layer on SiN surface using low-energy Ga ion implantation
J. Yanagisawa, M. Toda, T. Kitamura, H. Matsumoto, and Y. Akasaka
J. Vac. Sci. Technol. B 23 3205 - 3208 2005
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Formation of GaN films by Ga ion direct deposition under nitrogen radical atmosphere
M. Toda, J. Yanagisawa, K. Gamo, and Y. Akasaka
J. Vac. Sci. Technol. B 22 3012 - 3015 2004
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Maskless Mn implantation in GaAs using focused Mn ion beam
M. Itou, M. Kasai, T. Kimura, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Nucl. Instr. and Meth. B 206 1013 - 1017 2003
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In situ Si Doping in GaAs using Low-energy Focused Si Ion Beam/Molecular Beam Epitaxy Combined System
K. Kubo, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Proc. of 17th International Conference on the Application of Accelerators in Research and Industry 662 - 665 2003
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Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system
T. Hada, H. Miyamoto, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Nucl. Instr. and Meth. B 175-177 751 - 755 2001
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Formation of narrow grooves on thin metal layer by focused ion beam etching
M. Yoshida, S. Murakami, M. Nakayama, J. Yanagisawa, F. Wakaya, T. Kaito, and K. Gamo
Microelectronic Engineering 57-58 877 - 882 2001
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Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth
T. Hada, T. Goto, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
J. Vac. Sci. Technol. B 18 3158 - 3161 2000
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Galvanomagnetic effect of submicron exchange-coupled Co/Ni wire
T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, K. Gamo
Jpn. J. Appl. Phys. 39 6526 - 6529 2000
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Magnetization process and resistance jumps in a submicron-scale cross-shaped Co wire
T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, and K. Gamo
J. Mag. Mag. Mat. 222 79 - 85 2000
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Metastable domain structures of ferromagnetic microstructures observed by soft x-ray magnetic circular dichroism microscopy
S. Imada, S. Ueda, R. Jung, Y. Saitoh, M. Kotsugi, W. Kuch, J. Gilles, S. Kang, F. Offi, J. Kirschner, H. Daimon, T. Kimura, J. Yanagisawa, K. Gamo, and S. Suga
Jpn. J. Appl. Phys., Part 2 39 L585 - L587 2000
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Carier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system
T. Goto, T. Hada, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Appl. Surface Sci. 159-160 277 - 281 2000
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Low-energy focused Si ion beam deposition under oxygen atmosphere
J. Yanagisawa, Y. Wang, T. Hada, K. Murase, and K. Gamo
Nucl. Instr. and Meth. B 148 42 - 46 1999
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Exchange interaction from current and voltage probes in galvanomagnetic effect in polycrystal Co thin film
T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, and K. Gamo
Jpn. J. Appl. Phys. 38 4737 - 4740 1999
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Focused ion beam process for formation of a metal/insulator/metal double tunnel junction
M. Nakayama, J. Yanagisawa, F. Wakaya, and K. Gamo
Jpn. J. Appl. Phys. 38 7151 - 7154 1999
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Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system
J. Yanagisawa, T. Goto, T. Hada, M. Nakai, F. Wakaya, Y. Yuba, and K. Gamo
J. Vac. Sci. Technol. B 17 3072 - 3074 1999
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Interface states induced in GaAs by growth interruption during an in situ process
F. Wakaya, T. Matsubara, M. Nakayama, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
J. Vac. Sci. Technol. B 16 2313 - 2316 1998
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Effects of growth interruption in in situ process for buried quantum structures
F. Wakaya, T. Matsubara, M. Nakayama, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 41/42 591 - 594 1998
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Focused ion beam etching of resist/Ni multilayer films and applications to metal island structure formation
M. Nakayama, F. Wakaya, J. Yanagisawa, and K. Gamo
J. Vac. Sci. Technol. B 16 2511 - 2514 1998
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Direct deposition of silicon and silicon-oxide films using low-energy Si focused ion beam
J. Yanagisawa, H. Nakayama, O. Matsuda, K. Murase, and K. Gamo
Nucl. Instr. Methods B 127/128 893 - 896 1997
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Fabrication of buried quantum structures using FIB-MBE total vacuum process
F. Wakaya, J. Yanagisawa, T. Matsubara, H. Nakayama, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 35 451 - 454 1997
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Characterization of laterally selected Si doped layer formed in GaAs using a low-energy FIB-MBE combined system
H. Nakayama, J. Yanagisawa, F. Wakaya, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Mat. Res. Soc. Symp. Proc. 438 187 - 192 1997
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Characterization of Si-doped layer in GaAs fabricated by a focused ion beam/molecular beam epitaxy combined system
J. Yanagisawa, H. Nakayama, K. Oka, M. Nakai, F. Wakaya, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
J. Vac. Sci. Technol. B 15 2930 - 2933 1997
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Formation of buried two-dimensional electron gas in GaAs by Si ion doping using MBE-FIB combined system
J. Yanagisawa, H. Nakayama, F. Wakaya, Y. Yuba, and K. Gamo
Mat. Res. Soc. Symp. Proc. 396 701 - 705 1996
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Effects of growth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures
F. Wakaya, T. Matsubara, H. Nakayama, Y. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Physica B 227 268 - 270 1996
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Investigation of growth interruption in the UHV total vacuum process for buried quantum structures
F. Wakaya, T. Matsubara, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 30 475 - 478 1996
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Characterization of directly deposited silicon films using low-energy focused ion beam
J. Yanagisawa, N. Onishi, H. Nakayama, and K. Gamo
Jpn. J. Appl. Phys. 35 6584 - 6587 1996
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Fabrication of laterally selected Si doped layer in GaAs using a low-energy focused ion beam/molecular beam epitaxy combined system
J. Yanagisawa, H. Nakayama, F. Wakaya, Y. Yuba, and K. Gamo
J. Vac. Sci. Technol. B 14 3938 - 3941 1996
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Low-energy focused ion beam system and direct deposition of Au and Si
J. Yanagisawa, K. Kito, K. Monden, and K. Gamo
J. Vac. Sci. Technol. B 13 2621 - 2624 1995
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Transport properties and fabrication of coupled electron waveguides
F. Wakaya, H. Otoi, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, K. Gamo, D. G. Hasko, G. A. C. Jones, and H. Ahmed
Jpn. J. Appl. Phys. 34 4446 - 448 1995
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Flux dependence of implantation damage in GaAs induced by focused gallium ion beam
M. Takai, S. Hara, T. Kishimoto, and J. Yanagisawa
Proc. Ion Implantation Technology-94 856 - 859 1995
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Nuclear microprobe analysis of implantation damage induced by focused gallium ion beams in GaAs
M. Takai, S. Hara, T. Kishimoto, and J. Yanagisawa
Nucl. Instr. Methods B 104 524 - 527 1995
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Low energy ion irradiation effect on electron transport in GaAs/AlGaAs heterostructures
J. Yanagisawa, A. Nozawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Mat. Res. Soc. Symp. Proc. 354 165 - 170 1995
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Low energy focused ion beam system combined with molecular beam epitaxy system for fabrication of 3-dimensional buried semiconductor structures
J. Yanagisawa, K. Kito, K. Monden, and K. Gamo
Proc. SPIE (Electron-Beam Sources and Charged-Particle Optics) 2522 406 - 411 1995
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Maskless deposition of Au on GaAs by low-energy focused ion beam
K. Kito, J. Yanagisawa, K. Monden, H. Nakayama, Y. Yuba, and K. Gamo
Jpn. J. Appl. Phys. 34 6853 - 6856 1995
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Low energy focused ion beam and buried electron waveguides fabrication
F. Wakaya, A. Nozawa, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 23 123 - 126 1994
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Investigation of in situ process for GaAs/AlGaAs buried quantum wires
F. Wakaya, K. Umeda, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Jpn. J. Appl. Phys. 33 7223 - 7227 1994
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Ion beam irradiation effect on solubility of spin-on glass to methanol
J. Yanagisawa, Y.-B. Koh, and K. Gamo
Nucl. Instr. Methods B 80/81 1128 - 1131 1993
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Estimation of damage induced by focused Ga ion beam irradiation
T. Yamamoto, J. Yanagisawa, K. Gamo, S. Takaoka, and K. Murase
Jpn. J. Appl. Phys. 32 6268 - 6273 1993
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Direct patterning of spin-on glass by focused ion beam irradiation
Y.-B. Koh, T. Goto, J. Yanagisawa, and K. Gamo
Jpn. J. Appl. Phys. 31 4479 - 4482 1992
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Analysis of high energy ion scattering for the Si(111)7x7 DAS model by computer simulation
J. Yanagisawa and A. Yoshimori
Surface Sci. 231 297 - 303 1990