Papers - YANAGISAWA Junichi
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Reflective waveplate with subwavelength grating structure
Itsunari Yamada, Takaaki Ishihara and Junichi Yanagisawa
Jpn. J. Appl. Phys. 54 092203-1 - 0922003-4 2015
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Deformable Silicone Grating with Submicrometer Period
T. Ishihara, I. Yamada, J. Yanagisawa, J. Nishii, and M. Saito
Jpn. J. Appl. Phys. 2014
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Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition
K. Ishiizumi, J. Kikkawa, Y. Nakamura, A. Sakai, and J. Yanagisawa
Jpn. J. Appl. Phys. 50 06GC02 2011
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Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes
Hideo Takeuchi , Junichi Yanagisawa, Shuichi Tsuruta, Hisashi Yamada, Makoto Hata, and Masaaki Nakayama
Journal of Luminescence 131 531 - 534 2011
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Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures
Hideo Takeuchi, Junichi Yanagisawa, Shuichi Tsuruta, Hishashi Yamada, Masahiko Hata, and Masaaki Nakayama
Physica Status Solidi C 8 343 - 345 2011
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Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves
H. Takeuchi, J. Yanagisawa, and M.Nakayama
Physics Procedia 3 1109 - 1113 2010
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Frequency shift of terahertz electromagnetic waves originating from sub-picosecond-range carrier transport in undoped GaAs/n-type GaAs epitaxial layer structures
Hideo Takeuchi, Junichi Yanagisawa, Shuichi Tsuruta, Hisashi Yamada, Makoto Hata, and Masaaki Nakayama
Japanese Journal of Applied Physics 49 082001 1-5 2010
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Observation and quantification of the direction reversal of the surface band bending in GaAs1-xNx using terahertz electromagnetic wave and photoreflectance measurements
Hideo Takeuchi, Junichi Yanagisawa, Jun Hashimoto, and Masaaki Nakayama
Physica Status Solidi C 7 1844 - 1846 2010
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集束イオンビーム支援堆積法で形成したカーボン系薄膜の機械的特性
柳沢淳一
電気学会論文誌Ａ 130 949 - 954 2010
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Effect of Annealing on Mechanical Properties of Materials Formed by Focused Au or Si Ion-Beam-Induced Chemical Vapor Deposition Using Phenanthrene
T. Yo, H. Tanaka, T. Nagata, N. Fukata, T. Chikyow, A. Sakai, and J. Yanagisawa
Jpn. J. Appl. Phys. 48 06FB03 2009
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Fabrication of micro-fluid-channel structures by focused ion beam technique
J. Yanagisawa, H. Kobayashi, K. Koreyama, and Y. Akasaka
Mater. Res. Soc. Symp. Proc. 1181 1181-DD03-01 2009
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Intense emission of terahertz electromagnetic wave from an undoped GaAs/n -type GaAs epitaxial layer structure
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
Physica Status Solidi © 6 1513 - 1516 2009
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Effects of nitrogen incorporation on a direction of a surface band bending investigated by polarity of terahertz electromagnetic waves in GaAs(1-x)N(x) epitaxial layers
H. Takeuchi, J. Yanagisawa, J. Hashimoto, and M. Nakayama
J. Appl. Phys. 105 093539 2009
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Characterization of Deposited Materials Formed by Focused Ion Beam-Induced Chemical Vapor Deposition Using AuSi Alloyed Metal Source
T. Yo, H. Tanaka, K. Koreyama, T. Nagata, Y. Sakuma, K. Nakajima, T. Chikyow, J. Yanagisawa, and A. Sakai
Jpn. J. Appl. Phys. 47 5018 - 5021 2008
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Enhancement of terahertz electromagnetic wave emission from an undoped GaAs/n-type GaAs epitaxial layer structure
H. Takeuchi, J. Yanagisawa, T. Hasegawa, and M. Nakayama
Appl. Phys. Lett. 93 081916 2008
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Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy
J. Yanagisawa, H. Matsumoto, T. Fukuyama, Y. Shiraishi, T. Yodo, and Y. Akasaka
Nucl. Instr. and Meth. B 257 348 - 351 2007
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Deposition of carbonaceous structures using focused Au and Si ion-beam-induced chemical vapor deposition methods
R. Okada, T. Yo, J. Yanagisawa, and S. Matsui
J. Vac. Sci. Technol. B 25 2180 - 2183 2007
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Nano-porous structure formations on germanium surfaces by focused ion beam irradiations
J. Yanagisawa, K. Takarabe, K. Ogushi, K. Gamo, and Y. Akasaka
J. Phys.: Condens. Matter 19 445002 2007
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Formation of local ferromagnetic areas on GaAs by focused Mn ion beam implantation
M. Kasai, J. Yanagisawa, H. Tanaka, S. Hasegawa, H. Asahi, K. Gamo, and Y. Akasaka
Nucl. Instr. and Meth. B 242 240 - 243 2006
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Formation and characterization of swelled nano-porous structures on ion-irradiated Ge surfaces
J. Yanagisawa, K. Ogushi, K. Takarabe, K. Gamo, and Y. Akasaka
Mater. Res. Soc. Symp. Proc. 908E 0908-OO11-04.1 2006