Papers - YANAGISAWA Junichi
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Formation of GaN layer on SiN surface using low-energy Ga ion implantation
J. Yanagisawa, M. Toda, T. Kitamura, H. Matsumoto, and Y. Akasaka
J. Vac. Sci. Technol. B 23 3205 - 3208 2005
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Formation of GaN films by Ga ion direct deposition under nitrogen radical atmosphere
M. Toda, J. Yanagisawa, K. Gamo, and Y. Akasaka
J. Vac. Sci. Technol. B 22 3012 - 3015 2004
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Maskless Mn implantation in GaAs using focused Mn ion beam
M. Itou, M. Kasai, T. Kimura, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Nucl. Instr. and Meth. B 206 1013 - 1017 2003
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In situ Si Doping in GaAs using Low-energy Focused Si Ion Beam/Molecular Beam Epitaxy Combined System
K. Kubo, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Proc. of 17th International Conference on the Application of Accelerators in Research and Industry 662 - 665 2003
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Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system
T. Hada, H. Miyamoto, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Nucl. Instr. and Meth. B 175-177 751 - 755 2001
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Formation of narrow grooves on thin metal layer by focused ion beam etching
M. Yoshida, S. Murakami, M. Nakayama, J. Yanagisawa, F. Wakaya, T. Kaito, and K. Gamo
Microelectronic Engineering 57-58 877 - 882 2001
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Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth
T. Hada, T. Goto, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
J. Vac. Sci. Technol. B 18 3158 - 3161 2000
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Galvanomagnetic effect of submicron exchange-coupled Co/Ni wire
T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, K. Gamo
Jpn. J. Appl. Phys. 39 6526 - 6529 2000
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Magnetization process and resistance jumps in a submicron-scale cross-shaped Co wire
T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, and K. Gamo
J. Mag. Mag. Mat. 222 79 - 85 2000
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Metastable domain structures of ferromagnetic microstructures observed by soft x-ray magnetic circular dichroism microscopy
S. Imada, S. Ueda, R. Jung, Y. Saitoh, M. Kotsugi, W. Kuch, J. Gilles, S. Kang, F. Offi, J. Kirschner, H. Daimon, T. Kimura, J. Yanagisawa, K. Gamo, and S. Suga
Jpn. J. Appl. Phys., Part 2 39 L585 - L587 2000
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Carier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system
T. Goto, T. Hada, J. Yanagisawa, F. Wakaya, Y. Yuba, and K. Gamo
Appl. Surface Sci. 159-160 277 - 281 2000
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Low-energy focused Si ion beam deposition under oxygen atmosphere
J. Yanagisawa, Y. Wang, T. Hada, K. Murase, and K. Gamo
Nucl. Instr. and Meth. B 148 42 - 46 1999
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Exchange interaction from current and voltage probes in galvanomagnetic effect in polycrystal Co thin film
T. Kimura, F. Wakaya, J. Yanagisawa, Y. Yuba, and K. Gamo
Jpn. J. Appl. Phys. 38 4737 - 4740 1999
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Focused ion beam process for formation of a metal/insulator/metal double tunnel junction
M. Nakayama, J. Yanagisawa, F. Wakaya, and K. Gamo
Jpn. J. Appl. Phys. 38 7151 - 7154 1999
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Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system
J. Yanagisawa, T. Goto, T. Hada, M. Nakai, F. Wakaya, Y. Yuba, and K. Gamo
J. Vac. Sci. Technol. B 17 3072 - 3074 1999
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Interface states induced in GaAs by growth interruption during an in situ process
F. Wakaya, T. Matsubara, M. Nakayama, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
J. Vac. Sci. Technol. B 16 2313 - 2316 1998
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Effects of growth interruption in in situ process for buried quantum structures
F. Wakaya, T. Matsubara, M. Nakayama, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 41/42 591 - 594 1998
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Focused ion beam etching of resist/Ni multilayer films and applications to metal island structure formation
M. Nakayama, F. Wakaya, J. Yanagisawa, and K. Gamo
J. Vac. Sci. Technol. B 16 2511 - 2514 1998
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Direct deposition of silicon and silicon-oxide films using low-energy Si focused ion beam
J. Yanagisawa, H. Nakayama, O. Matsuda, K. Murase, and K. Gamo
Nucl. Instr. Methods B 127/128 893 - 896 1997
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Fabrication of buried quantum structures using FIB-MBE total vacuum process
F. Wakaya, J. Yanagisawa, T. Matsubara, H. Nakayama, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 35 451 - 454 1997