Papers - YANAGISAWA Junichi
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Characterization of laterally selected Si doped layer formed in GaAs using a low-energy FIB-MBE combined system
H. Nakayama, J. Yanagisawa, F. Wakaya, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Mat. Res. Soc. Symp. Proc. 438 187 - 192 1997
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Characterization of Si-doped layer in GaAs fabricated by a focused ion beam/molecular beam epitaxy combined system
J. Yanagisawa, H. Nakayama, K. Oka, M. Nakai, F. Wakaya, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
J. Vac. Sci. Technol. B 15 2930 - 2933 1997
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Formation of buried two-dimensional electron gas in GaAs by Si ion doping using MBE-FIB combined system
J. Yanagisawa, H. Nakayama, F. Wakaya, Y. Yuba, and K. Gamo
Mat. Res. Soc. Symp. Proc. 396 701 - 705 1996
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Effects of growth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures
F. Wakaya, T. Matsubara, H. Nakayama, Y. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Physica B 227 268 - 270 1996
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Investigation of growth interruption in the UHV total vacuum process for buried quantum structures
F. Wakaya, T. Matsubara, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 30 475 - 478 1996
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Characterization of directly deposited silicon films using low-energy focused ion beam
J. Yanagisawa, N. Onishi, H. Nakayama, and K. Gamo
Jpn. J. Appl. Phys. 35 6584 - 6587 1996
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Fabrication of laterally selected Si doped layer in GaAs using a low-energy focused ion beam/molecular beam epitaxy combined system
J. Yanagisawa, H. Nakayama, F. Wakaya, Y. Yuba, and K. Gamo
J. Vac. Sci. Technol. B 14 3938 - 3941 1996
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Low-energy focused ion beam system and direct deposition of Au and Si
J. Yanagisawa, K. Kito, K. Monden, and K. Gamo
J. Vac. Sci. Technol. B 13 2621 - 2624 1995
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Transport properties and fabrication of coupled electron waveguides
F. Wakaya, H. Otoi, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, K. Gamo, D. G. Hasko, G. A. C. Jones, and H. Ahmed
Jpn. J. Appl. Phys. 34 4446 - 448 1995
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Flux dependence of implantation damage in GaAs induced by focused gallium ion beam
M. Takai, S. Hara, T. Kishimoto, and J. Yanagisawa
Proc. Ion Implantation Technology-94 856 - 859 1995
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Nuclear microprobe analysis of implantation damage induced by focused gallium ion beams in GaAs
M. Takai, S. Hara, T. Kishimoto, and J. Yanagisawa
Nucl. Instr. Methods B 104 524 - 527 1995
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Low energy ion irradiation effect on electron transport in GaAs/AlGaAs heterostructures
J. Yanagisawa, A. Nozawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Mat. Res. Soc. Symp. Proc. 354 165 - 170 1995
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Low energy focused ion beam system combined with molecular beam epitaxy system for fabrication of 3-dimensional buried semiconductor structures
J. Yanagisawa, K. Kito, K. Monden, and K. Gamo
Proc. SPIE (Electron-Beam Sources and Charged-Particle Optics) 2522 406 - 411 1995
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Maskless deposition of Au on GaAs by low-energy focused ion beam
K. Kito, J. Yanagisawa, K. Monden, H. Nakayama, Y. Yuba, and K. Gamo
Jpn. J. Appl. Phys. 34 6853 - 6856 1995
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Low energy focused ion beam and buried electron waveguides fabrication
F. Wakaya, A. Nozawa, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Microelectronic Engineering 23 123 - 126 1994
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Investigation of in situ process for GaAs/AlGaAs buried quantum wires
F. Wakaya, K. Umeda, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase, and K. Gamo
Jpn. J. Appl. Phys. 33 7223 - 7227 1994
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Ion beam irradiation effect on solubility of spin-on glass to methanol
J. Yanagisawa, Y.-B. Koh, and K. Gamo
Nucl. Instr. Methods B 80/81 1128 - 1131 1993
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Estimation of damage induced by focused Ga ion beam irradiation
T. Yamamoto, J. Yanagisawa, K. Gamo, S. Takaoka, and K. Murase
Jpn. J. Appl. Phys. 32 6268 - 6273 1993
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Direct patterning of spin-on glass by focused ion beam irradiation
Y.-B. Koh, T. Goto, J. Yanagisawa, and K. Gamo
Jpn. J. Appl. Phys. 31 4479 - 4482 1992
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Analysis of high energy ion scattering for the Si(111)7x7 DAS model by computer simulation
J. Yanagisawa and A. Yoshimori
Surface Sci. 231 297 - 303 1990